Integrierte Detektorschaltungen

  • H. Herbst
Chapter
Part of the Halbleiter-Elektronik book series (HALBLEITER, volume 11)

Zusammenfassung

Die Entwicklung der integrierten Detektorschaltungen geht ein her mit dem Fortschritt des Integrationsgrades bei den integrierten Schaltungen überhaupt. Sie ist daher auch im wesentlichen an das Silizium gebunden. Nur dort, wo zwingende technische Gründe gegen das Silizium sprechen, wie im infraroten Spektralbereich, werden andere Werkstoffe als Detektormaterial eingesetzt. In diesem Kapitel sollen Schaltungen behandelt werden, bei denen eine Vielzahl von Detektoren zusammen mit ihren Ausleseschaltungen integriert sind. Vidikonröhren etwa, wo nur die Detektoranordnung integriert ist und das Signal durch Abtasten mit einem Elektronenstrahl ausgelesen wird, werden nur zum Vergleich herangezogen.

This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literatur zu Kapitel 5

  1. 5.1
    White, M.H.: Design of solid-state imaging devices. In: Solid-state imaging. Leyden und Reading: Noordhoff Intern. Publ. 1976, S. 485–522Google Scholar
  2. 5.2
    V.d. Wiele, F.: Anti-reflection films and multilayer structures. In: Solid-state imaging. Leyden und Reading: Noordhoff Intern. Publ. 1976, S. 29–45Google Scholar
  3. 5.3
    Schroder, D.K.: Transparent gate silicon photodetectors. IEEE J. Solid-State Circ. SC-13 (1978) 16–23CrossRefGoogle Scholar
  4. 5.4
    Brown, D.M.; Burke, H.K.; Ghezzq, M.; McConnelee, P.; Michon, G.; Vogelsong, T.L.: Row readout in CID-imaging. IEEE J. Solid-State Circ. SC-15 (1980) 28–29Google Scholar
  5. 5.5
    Grove, A.S.: Physics and technology of semiconductor devices. New York: Wiley 1967, S. 177 ff.Google Scholar
  6. 5.6
    Herbst, H.; Deppe, H.-R.: High density linear CGD-imagers. Europ. Solid-State Circ. Conf., Amsterdam 1978, Dig. Tech. Papers, 152–154Google Scholar
  7. 5.7
    Tsukada, T.; Baji, T.; Shimomoto, Y.; Sanano, A.; Tanaka, Y., Matsumaru, H.; Takasaki, Y.; Koike, N.; Akiyama, T.: New solid-state image pickup devices using photosensitive chalcogenide glass film. IEEE Int. Electron Dev. Meet. Tech. Dig. (1979) 134–136Google Scholar
  8. 5.8
    Chikamura, T.; Fujiwara, S.; Shibata, T.; Miyata, Y.; Terui, Y.; Wada, T.; Ohta, Y.; Fukai, M.: A high-sensitiv ity solid-state image sensor using a thin-film ZnSe-Zn. CdxTe heterojunction photosensor. IEEE Trans. Electron Dev. ED-29 (1982) 999–1004CrossRefGoogle Scholar
  9. 5.9
    Tsukada, T. et al.: Solid-state color imager using an a-Si : H photoconductive film. IEEE Int. Electron. Dev. Meet. Tech. Dig. (1981) 479–482Google Scholar
  10. 5.10
    Chamberlain, S.G.; Harper, D.H.: MTF simulation including transmittance effects and experimental results of chargecoupled imagers. IEEE J. Solid-State Circ. SC-13 (1978) 71–80CrossRefGoogle Scholar
  11. 5.11
    Oda, E. et al.: A CCD image sensor with 768 . 490 pixels. IEEE Int. Solid-State Circ. Conf., Dig. Tech. Papers (1983) 264–265Google Scholar
  12. 5.12
    Herbst, H.; Pfleiderer, H.-J.: Modulation transfer function of quadrilinear CCD imager. Electronics Letters 12 (1976) 676–677CrossRefGoogle Scholar
  13. 5.13
    Sheu, L.S.-P; Kadekodi, N.; Ngo, T.; Ibrahim, A.: 3553 element quadrilinear CCD imager. IEEE Int. Solid-State Circ. Conf., Dig. Tech. Papers (1983) 252–253Google Scholar
  14. 5.14
    Joyce, W.B.; Bertram, W.F.: Linearized dispersion relation and Green’s function for discrete charge transfer devices with incomplete transfer. Bell Syst. Tech. J. 50 (1971) 1741–1759MathSciNetGoogle Scholar
  15. 5.15
    Hynecek, J.: Virtual phase technology: A new approach to fabrication of large-area CCD’s. IEEE Trans. Electron. Dev. ED-78 (1981) 483–489CrossRefGoogle Scholar
  16. 5.16
    Brown, D.M.; Ghezzo, M.; Sargent, P.L.: High density CID imagers. IEEE J. Solid-State Circ. Sc-13 (1978) 5–10CrossRefGoogle Scholar
  17. 5.17
    Michon, G.J.; Burke, H.K.: Charge-injection devices for solid-state imaging. In: Solid-state imaging. Leyden und Reading: Noordhoff Intern. Publishing 1976, S. 447–461Google Scholar
  18. 5.18
    Koch, R.; Herbst, H.: Solid-state imagers with integra ted fixed-pattern noise suppression. Siemens Forsch.-u. Entwicklungs-Ber. 8 (1979) 268–271Google Scholar
  19. 5.19
    Terakawa, S.; Yamada, T.; Horii, K.; Takamura, T.; Teramoto, I.: A new organization area image sensor with CCD readout through charge priming transfer. IEEE Trans. Electron Dev. Lett. EDL-1 (1980) 86–88CrossRefGoogle Scholar
  20. 5.20
    Theuwissen, A.J.P.; Weijtens, C.H.L.; Esser, L.J.M.; Cox, J.N.G.; Duyvelaar, H.T.A.R.; Keur, W.C.: The accordion imager: An ultra high density frame transfer CCD. IEEE Int. Electron Dev. Meet. Tech. Dig. (1984) 40–43Google Scholar
  21. 5.21
    Ohba, S.; Nakai, M.; Ando, H.; Hanamura, S.; Shimada, S.; Satoh, K.; Takahashi, K.; Kubo, M.; Fujita, T.: MOS area sensor: Part II -Low-noise MOS area sensor with antiblooming photodiodes. IEEE J. Solid-State Circ. SC-15 (1980) 747–752CrossRefGoogle Scholar
  22. 5.22
    Hall, J.A.: Amplifier and amplifier noise considerations. In: Solid-state imaging. Leyden und Reading: Noordhoff Intern. Publ. 1976, S. 535–559Google Scholar
  23. 5.23
    Ishihara, Y.; Takeuchi, E.; Teranishi, N.; Kohono, A.; Aizawa, T.; Arai, K.; Shiraki, H.: CCD image sensor for single sensor color camera. IEEE Int. Solid-State Circ. Conf., Dig. Tech. Papers (1980) 24–25Google Scholar
  24. 5.24
    Amelio, G.F.: The impact of large CCD image sensing area arrays. Proc. Intern. Conf. Tech. Appl. Charge-Coupled Devices, Edinburgh (1974) 25–27Google Scholar
  25. 5.25
    White, M.H.; Lampe, D.R.; Blaha, F.C.; Mack, I.A.: Characterization of surface channel CCD imaging arrays at low light levels. IEEE J. Solid-State Circ. SC-9 (1974) 1CrossRefGoogle Scholar
  26. 5.26
    Reimers, U.: Farbfilterstrukturen für Fernsehkameras mit einem Halbleiter-Bildsensor. Fernseh-und Kinotechnik 36 (1982) 299–305Google Scholar
  27. 5.27
    Aoki, M.; Ohba, S.; Takemoto, I.; Nagahara, S.; Sasano, A.; Kubo, M.: MOS color imaging device. IEEE Int. Solid State Circ. Conf., Dig. Tech. Papers (1980) 26–27Google Scholar
  28. 5.28
    Furukawa, A.; Matsunaga, Y.; Suzuki, N.; Harada, N.; Hayashimoto, Y.; Sato, S.; Egawa, Y.; Yoshida, O.: An interline transfer CCD for a single sensor 2/3” color camera. Int. Electron Dev. Meet. Tech. Dig. (1980) 346–349Google Scholar
  29. 5.29
    Terui, Y.; Wada, T.; Yoshiko, M.; Kadota, H.; Chikamura, T.; Tanaka, H.; Ota, Y.; Fujiwara, Y.; Ogawa, K.; Kitahiro, O.; Horiuchi, S.: A solid-state color image sensor using ZnSe-Zn1-xCdxTe heterojunction thin-film photoconductor. IEEE Int. Solid-State Circ. Conf., Dig. Tech. Papers (1980) 34–35Google Scholar
  30. 5.30
    Miyatake, S.; Nagakawa, T.; Misawa, K.; Okuno, M.; Matsui, O.; Awane, K.: A CCD imager with 580 · 475 clock line-isolated photodiodes. IEEE Int. Solid-State Circ. Conf., Dig. Tech. Papers (1983) 262–263Google Scholar
  31. 5.31
    Ohba, S.; Nakai, M.; Ando, H.; Ozaki, T.; Ozawa, N.; Imaide, T.; Ikeda, K.; Suzuki, T.; Takemoto, I.; Masuhara, T.: MOS imaging with random noise suppression. IEEE Int. Solid-state Circ. Conf., Dig. Tech. Papers (1984) 26–27Google Scholar
  32. 5.32
    Berger, J.L., Brissot, L.; Cazaux, Y.; Descure, P.: A line transfer color image sensor with 576 · 462 pixels. IEEE Int. Solid-state Circ. Conf., Dig. Tech. Papers (1984) 28–29Google Scholar
  33. 5.33
    Mitani, N.; Furusawa, T.; Tsuchihashi, Y.; Kitamura, Y.; Kiriyama, Y.; Rai, Y.: A single chipe 1/2” frame transfer CCD color image sensor. IEEE Int. Electron. Dev Meet. Tech. Dig. (1984) 44–47Google Scholar
  34. 5.34
    Horii, K.; Kuruda, T.; Matsuda, Y.; Kuriyama, T.; Mino, N.: A 490 · 404 element imager for a single-chip color camera. IEEE Int. Electron Dev. Meet. Tech. Dig. (1985) 96–97Google Scholar
  35. 5.35
    Matsumoto, H.; Shimada, T.; Abe, M.; Ando, T.; Matsui, H.; Takeshita, K.; Hashimoto, T.: IL CCD imager with MOS photo sensor using high resistivity MCZ substrate. Tech. Papers Symp. Inst. Television Eng. Japan (1933) 35–40Google Scholar
  36. 5.36
    Kosonocky,W.F.: Visible and infrared solid-state image sensors. IEEE Int. Electron Dev. Meet. Tech. Dig. (1983) 1–7Google Scholar
  37. 5.37
    Gibbons, M.D. et al.: Status of InSb charge injection device (CID) detection technology. Proc. SPIE 443 (1982)Google Scholar
  38. 5.38
    Chapman, R. et al.: Monolithic HgCdTe charge transfer device infrared imaging arrays. IEEE Trans. Electron Dev. ED-27 (1980) 134–145CrossRefGoogle Scholar
  39. 5.39
    Nummedal, K.: Late news paper, Intern. Conf. Tech. Appl. Charge-Coupled Devices, Edinburgh (1974)Google Scholar
  40. 5.40
    Shepherd, F.D.; Yang, A.C.: Silicon-Schottky retinas for infrared imaging. IEEE Int. Electron Dev. Meet. Tech. Dig. (1973) 310–313Google Scholar
  41. 5.41
    Elabd, H.; Kosonocky, W.F.: Theory and measurements of photoresponse for thin film Pd2Si and PtSi infrared Schottky-barrier detectors with optical cavity. RCA Rev. 43 (1982) 569–589Google Scholar
  42. 5.42
    Kosonocky, W.F. et al.: Design and performance of 64–128 elements PtSi Schottky-barrier infrared charge-coupled device (IR-CCD) focal plane array. Proc. SPIE 344 (1982) 66–77Google Scholar
  43. 5.43
    Kimata, M.; Denda, M.; Yutani, N.; Tsubouchi, N.; Shibata, H.: A 256 · 256-element Si monolithic IR-CCD sensor. IEEE Int. Solid-state Circ. Conf., Dig. Tech. Papers (1983) 254–255Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1986

Authors and Affiliations

  • H. Herbst

There are no affiliations available

Personalised recommendations