Water Oxidation Processes at n-PtS2 and n-RuS2-Semiconductor Surfaces Studied with ns-Pulse Lasers

  • W. Jaegermann
  • E. Janata
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 33)

Abstract

Light-induced splitting of water in photoelectrosynthetic cells may be possible with one semiconductor as photoanode [11. As promising material, semiconducting transition metal compounds have been tested for which the electronic transition occurs between quasi-nonbonding d bands [2]. n-PtS2 and n-RuS2 have shown to be capable of oxidizing water with partial utilization of light energy [3, 4]. But the solar conversion efficiency is still limited to small values because an external bias is necessary to achieve high photocurrent densities. This is probably caused by an inhibition of the water oxidation reaction which apparently results in charging the semiconductor surface [5].

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Copyright information

© Springer-Verlag Berlin Heidelberg 1983

Authors and Affiliations

  • W. Jaegermann
    • 1
  • E. Janata
    • 1
  1. 1.Bereich StrahlenchemieHahn-Meitner-Institut für Kernforschung BerlinBerlin 39Fed. Rep. of Germany

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