Interdiffusion of Cu-In Films Studied by the Resistometric Method
The inter diffusion of Cu-In bilayers is studied by the resistometric method. In each case one of the films is at least 8 times thicker than the other, and the total thickness is in the order of 140 nm. The difussion of Cu in In lowers the resistance and the diffusion of In in Cu raises it. The diffusion constant, at 295 K, is calculated by means of a simple model of the diffusion of a thin layer of material deposited on a thicker film. From the results it is concluded that the dominant mechanism is grain boundary diffusion.
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