Silicon Injection-Mode 1.3 <Emphasis Type="Italic">µ</Emphasis>m Electro-optical Switching

J. P. Lorenzo; R. A. Soref

doi:10.1007/978-3-642-73388-8_20

Photonic Switching pp 102-105 | Cite as

Silicon Injection-Mode 1.3 µm Electro-optical Switching

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J. P. Lorenzo
R. A. Soref

Conference paper

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Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 25)

Abstract

An all-silicon 1.3-micron wavelength electrooptical switching phenomenon is demonstrated. Injection of minority carriers induces a refractive index change resulting in partial 2 × 2 or variable rib-to-slab switching.

Keywords

Optical Power Minority Carrier Refractive Index Change Ridge Waveguide Channel Waveguide

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References

1.
J.P. Lorenzo and R.A. Soref submitted to Appl. Phys. Lett., Feb., (1987).Google Scholar
2.
R.A. Soref and J.P. Lorenzo, IEEE J. of Quant. Elec., June 1986.Google Scholar
3.
R.A. Soref and B.R. Bennett, IEEE J. of Quant. Elec, Jan. 1987.Google Scholar
4.
V.I. Sankin, V.K. Subashiev, Sov. Phys.-Semicon., Vol. 3, 1523 (1970).Google Scholar

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Authors and Affiliations

J. P. Lorenzo
- 1
R. A. Soref
- 1

1.Rome Air Development CenterSolid State Sciences DirectorateUSA