Semiconductor Interfaces pp 119-125 | Cite as
Scanning Tunneling Microscopy and Spectroscopy
Conference paper
Abstract
Scanning Tunneling Microscopy (S.T.M.) is a real–space surface imaging method with atomic or subatomic resolution in all three dimensions which has been developed by 6. BINNIG and H. ROHRER. Besides imaging the surface topography, it also provides useful information on its electronic properties as well as spectroscopic images. The principle and operation modes of tunneling microscopy and spectroscopy will be described and illustrated by applications to Si surfaces and interfaces.
Keywords
Scan Tunneling Microscopy Electron Tunneling Spectroscopic Image Tunneling Spectroscopy Tunneling Condition
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References
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