The Capillary Action Shaping Technique and Its Applications
Conference paper
Abstract
Conventional melt-growth techniques such as float-zoning, Czochralski pulling, or Bridgman growth typically produce crystals in the form of cylindrical ingots. For many applications, only a thin segment of the crystal is required and hence, the ingot is sectioned into wafers. This operation is usually carried out with a diamondedged saw blade by abrasive cutting action. For small-scale usage or for inexpensive crystal materials, this is a generally acceptable processing step. One undesireable consequence is the introduction of surface damage due to the abrasive contact. However, the damage can usually be removed by appropriate etching and polishing procedures.
Keywords
Silicon Carbide Boron Nitride Boron Carbide Liquid Silicon Vitreous Carbon
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References
- 1.Barrett, D. L. et al.: J. Electrochem. Soc. 118, 952 (1971)CrossRefGoogle Scholar
- 2.Bennett, A. I., Longini, R. L.: Phys. Rev. 116, 53 (1959)CrossRefGoogle Scholar
- 3.Billig, E.: Proc. Roy. Soc. (London) A229, 346 (1955)CrossRefGoogle Scholar
- 4.Bleil, C. E.: J. Cryst. Growth 5, 99 (1969)CrossRefGoogle Scholar
- 5.Boatman, J., Goundry, P.: Electrochem. Technol. 5, 98 (1967)Google Scholar
- 6.Brissot, J. J., Raynaud, H.: Electrochem. Technol. 1, 304 (1963)Google Scholar
- 7.Ciszek, T. F.: Mater. Res. Bull. 7, 731 (1972)CrossRefGoogle Scholar
- 8.Ciszek, T. F.: Phys. Stat. Sol. (a) 32, 521 (1975)CrossRefGoogle Scholar
- 9.Ciszek, T. F.: J. Appl. Phys. 47, 440 (1976)CrossRefGoogle Scholar
- 9a.Ciszek T. F., Hurd, J. L.: “Melt Growth of Silicon Sheets by Edge-Supported Pulling”. Proceedings of the Symposia on Electronic and Optical Properties of Polycrystalline or Impure Semiconductors and Novel Silicon Growth Methods. Ed. by K. V. Ravi and B. O’Mara. St. Louis, MO; 11-16 May, 1980. The Electrochemical Soc., Pennington, NJ; Proceedings Volume 80 - 5; 213-222Google Scholar
- 10.Ciszek, T. F., Schwuttke, G. H.: Phys. Stat. Sol. (a) 27, 231 (1975)CrossRefGoogle Scholar
- 10a.Ciszek, T. F. et al.: Proc. 15th IEEE Photovoltaic Specialists Conf. (1981)Google Scholar
- 11.Ciszek, T. F., Schwuttke, G. H., Yang, K. H.: J. Cryst. Growth 46, 527 (1979)CrossRefGoogle Scholar
- 12.Dermatis, S. N., Faust, J. W., Jr.: IEEE Trans. Commun. and Electronics 82, 94 (1963)Google Scholar
- 13.Gurtler, R. W. et al.: J. Electronic Materials 7, 441 (1978)CrossRefGoogle Scholar
- 14.Koyanagi, T.: Proc. 12th IEEE Photovoltaic Specialists Conf., 627 (1976)Google Scholar
- 15.LaBelle, H. E., Jr.: Mater. Res. Bull. 6, 581 (1971)CrossRefGoogle Scholar
- 16.Laplace, P. S. de: Mechanique Celeste, Supplement to Book 10 (1806)Google Scholar
- 17.Ravi, K. V.: J. Cryst. Growth 39, 1 (1977)CrossRefGoogle Scholar
- 18.Scace, R. I., Slack, G. A.: The Si-C and Ge-C Phase Diagrams, Proc. Conf., Silicon Carbide, Boston, April 1959, New York: Pergamon Press 1960Google Scholar
- 19.Schwabe, D., Scharmann, A.: J. Cryst. Growth 46, 125 (1979)CrossRefGoogle Scholar
- 20.Schwuttke, G. H., Yang, K., Ciszek, T. F.: J. Cryst. Growth 43, 329 (1978)CrossRefGoogle Scholar
- 21.Stepanov, A. V.: Zh. Tekh. Fiz. (USSR) 29, 381 (1959)Google Scholar
- 22.Stepanov, A. V.: Bull Acad. Sci. (USSR) 33, 1775 (1969)Google Scholar
- 23.Surek, T.: Scripta Met. 10, 425 (1976)CrossRefGoogle Scholar
- 24.Surek, T., Chalmers, B., Mlavsky, A. I.: J. Cryst. Growth 42, 453, (1977)CrossRefGoogle Scholar
- 25.Swets, D. E.: Electrochem. Technol. 5, 385 (1967)Google Scholar
- 26.Tsivinskii, S. V., Koptev, Y. I., Stepanov, A. V.: Sov. Physics-Solid State 8, 449 (1966)Google Scholar
- 27.Tsivinskii, S. V., Stepanov, A. V.: ibid. 7, 148 (1965)Google Scholar
- 28.Tucker, T. N., Schwuttke, G. H.: Appl. Phys. Letters 9, 219 (1966)CrossRefGoogle Scholar
- 29.Tucker, T. N., Distribution Coefficient of Carbon in Silicon, paper Oct. 1968 Meet. Electrochem. Soc., Montreal, CanadaGoogle Scholar
- 30.v. Gompertz, E.: Z. Phys. 8, 194 (1922)Google Scholar
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