Films with High Dielectric Constants: for Passive Capacitance

  • Takashi Hori
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 34)

Abstract

This chapter describes films having dielectric constants higher than SiO2 that are mainly employed for passive capacitance in DRAM memories. For background information, see Sect. 1.3.

Keywords

High Dielectric Constant Spontaneous Polarization Ferroelectric Material Nonvolatile Memory Breakdown Strength 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 6.1
    L.H. Parker, A.F. Tasch: IEEE Cir. Dev. Magazine (January 1990)p.17Google Scholar
  2. 6.2
    H. Sunami, S. Asai: In Semiconductor Research, Vol. 24, ed. by J. Nishizawa (Kogya Chosakai Pub., Tokyo 1986)p.51 [in Japanese]Google Scholar
  3. 6.3
    K. W. Böer: Survey of Semiconductor Physics (Van Nostrand Reinhold, New York 1990)Google Scholar
  4. 6.4
    H. Shinriki, M. Nakata: IEEE Trans. ED-38, 455 (1991)CrossRefGoogle Scholar
  5. 6.5
    E. Takeda, T. Kaga, K. Torii: In Integration Technology of Thin Ferroelectric Films, ed. by T. Shiosaki (Science Forum, Tokyo 1992) Chap. 5, Sect. 1 [in Japanese]Google Scholar
  6. 6.6
    S. Yamamichi, T. Sakuma, K. Takemura, Y. Miyasaka: Jpn. J. Appl. Phys. 30, 2193 (1991)ADSCrossRefGoogle Scholar
  7. 6.7
    H. Yamaguchi, P.-Y. Lesaicherre, T. Sakuma, Y. Miyasaka, A. Ishitani, M. Y. Yoshida: Jpn. J. Appl. Phys. 32,4069 (1993)ADSCrossRefGoogle Scholar
  8. 6.8
    C.S. Hwang, S.D. Park, C.S. Kang, H.-J. Cho, H.-K. Kang, S.T. Ahn, M.Y. Lee: Jpn. J. Appl. Phys. 34, 5178 (1995)ADSCrossRefGoogle Scholar
  9. 6.9
    E. Fujii, Y. Uemoto, S. Hayashi, T. Nasu, Y. Shimada, A. Matsuda, M. Kibe, M. Azuma, T. Ohtsuki, G. Kano, M. Scott, L.D. McMillian, C.A. Paz de Araujo: IEEE IEDM (1992) Digest p.267Google Scholar
  10. 6.10
    T. Horikawa, N. Mikami, T. Makita, J. Tanimura, M. Kataoka, K. Sato, M. Nunoshita: Jpn. J. Appl. Phys. 32, 4126 (1993)ADSCrossRefGoogle Scholar
  11. 6.11
    T. Kawahara, M. Yamamura, T. Makita, J. Naka, A. Yuuki, N. Mikami, K. Ono: Jpn. J. Appl. Phys. 33, 5129 (1994)ADSCrossRefGoogle Scholar
  12. 6.12
    M. Shimizu, T. Katayama, M. Sugiyama, T. Shiosaki, Jpn. J. Appl. Phys. 32, 4074 (1993)ADSCrossRefGoogle Scholar
  13. 6.13
    R. Khamankar, J. Kim, B. Jiang, C. Sudhama, P. Maniar, R. Moazzami, R. Jones, J. Lee: IEEE IEDM (1994) Digest p.337Google Scholar
  14. 6.14
    T. Mihara, H. Watanabe, C.A. Paz de Araujo: Jpn. J. Appl. Phys. 33, 5281 (1994)ADSCrossRefGoogle Scholar
  15. 6.15
    Y. Ohji, T. Kusaka, I. Yoshida, A. Hiraiwa, K. Yagi, K. Mukai: IEEE IRPS (1987) Proc. p.55Google Scholar
  16. 6.16
    K. Yoshikawa: In Thermal Silicon Dioxides and their Interfaces, ed. by K. Taniguchi, (Realize, Tokyo, 1991) Chap. 7 [in Japanese]Google Scholar
  17. 6.17
    S.M. Sze: Physics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981)Google Scholar
  18. 6.18
    K. Kobayashi, H. Miyatake, J. Mitsuhashi, M. Hirayama, T. Higaki, H. Abe: VLSI Symp. (1990) Digest p.119Google Scholar
  19. 6.19
    F.R. Libsch, M.H. White: Solid-State Electron. 33, 105(1990)ADSCrossRefGoogle Scholar
  20. 6.20
    K.I. Lundström, C.H. Svensson: IEEE Trans. ED-19, 826 (1972)CrossRefGoogle Scholar
  21. 6.21
    P.C.Y. Chen: IEEE Trans. ED-24, 584 (1977)CrossRefGoogle Scholar
  22. 6.22
    T. Hagiwara, R. Kondo, S. Minami, T. Aoto, Y. Itoh: IEEE J. SC-15, 346 (1980)Google Scholar
  23. 6.23
    T. Nozaki, T. Tanaka, Y. Kijiya, E. Kinoshita, T. Tsuchiya: Symp, VLSI Circuits(1990) Digest p.101Google Scholar
  24. 6.24
    C. Hu: In Nonvolatile Semiconductor Memories, ed. by C. Hu (IEEE Press, New York 1991) Pt.1Google Scholar
  25. 6.25
    S. Mori, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, K. Narita, E. Sakagami, K. Yoshikawa: IEEE IRPS (1990) Proc. p. 132Google Scholar
  26. 6.26
    M. Koyanagi: Submicron Devices II(Maruzen, Tokyo 1988)[in Japanese]Google Scholar
  27. 6.27
    S. Nadahara, J. Shiozawa, K. Imai, K. Suguro, K. Yamabe: Appl. Sur. Sci. 41/42, 425 (1989)CrossRefGoogle Scholar
  28. 6.28
    T. Watanabe, N. Goto, N. Yasuhisa, T. Yanase, T. Tanaka, S. Shinozaki: IEEE IRPS (1987) Proc. p. 50Google Scholar
  29. 6.29
    T. T. Sheng, R.B. Marcus: J. Electrochem. Soc. 125,432(1978)CrossRefGoogle Scholar
  30. 6.30
    F. T. Liou, S.O. Chen: IEEE Trans. ED-31, 1736(1984)CrossRefGoogle Scholar
  31. 6.31
    Y. Ohno, T. Kaneoka, I. Ogoh, J. Mitsuhashi, M. Hirayama, T. Kato: VLSI Symp. (1988) Digest p.35Google Scholar
  32. 6.32
    K. Ando, A. Ishitani, K. Hamano: IEEE Semicond. Interface Specialist Conf. (1990) Proc. Talk 2. 1Google Scholar
  33. 6.33
    E. Kaplan, M. Balog, D. Frohman-Bentchkowsky: J. Electrochem. Soc. 123, 1570 (1976)CrossRefGoogle Scholar
  34. 6.34
    S. Schiller, U. Heisig, K. Steinfelder, J. Strümpfel: Thin Solid Films 63, 369 (1979)ADSCrossRefGoogle Scholar
  35. 6.35
    M. Koyanagi, Y. Sakai, M. Ishihara, M. Tazunoki, N. Hashimoto: IEEE Trans. ED-27, 1596 (1980)CrossRefGoogle Scholar
  36. 6.36
    S. Kimura, Y. Nishioka, A. Shintomi, K. Mukai: J. Electrochem. Soc. 130, 2414 (1983)CrossRefGoogle Scholar
  37. 6.37
    T. Ito, H. Ishikawa, T. Nakamura: Thin Film Technology of VLSIs (Maruzen, Tokyo 1986)Chap.4 [in Japanese]Google Scholar
  38. 6.38
    H. Shinriki, Y. Nishioka, Y. Ohgi, K. Mukai: IEEE IEDM (1986) Digest p.684Google Scholar
  39. 6.39
    B.W. Shen, I.-C. Chen, S. Banerjee, G.A. Brown, J. Bohlman, P.-H. Chang, R.R. Doering: IEEE IEDM (1987) Digest p.582Google Scholar
  40. 6.40
    M. Saitoh, T. Mori, H. Tamura: IEEE IEDM (1986) Digest p.680Google Scholar
  41. 6.41
    T. Kato, T. Ito, M. Taguchi, T. Nakamura, H. Ishikawa: VLSI Symp. (1983) Digest p.86Google Scholar
  42. 6.42
    S. Kamiyama, T. Saeki, H. Mori, Y. Numasawa: IEEE IEDM (1991) Digest p.827Google Scholar
  43. 6.43
    I.M. Ross: US Patent 2791760 (1955)Google Scholar
  44. 6.44
    S.S. Eaton, D.B. Butler, M. Parris, D. Wilson, H. McNeillie: IEEE ISSCC (1988) Digest p. 130Google Scholar
  45. 6.45
    J.F. Scott: 1st Pacific Rim Workshop on Applications of Ferroelectrics, Taejon, South Korea (1994)Google Scholar
  46. 6.46
    T. Shiosaki: 12th Breakthrough Seminar, Tokyo (1994) Proc. p.5 [in Japanese]Google Scholar
  47. 6.47
    J.F. Scott, C.A. Paz de Araujo: Science 246, 1400(1989)ADSCrossRefGoogle Scholar
  48. 6.48
    D. Bondurant, F. Gnadinger: IEEE Spectrum 26, 30 (July 1989)CrossRefGoogle Scholar
  49. 6.49
    B. Raveau, C. Michel, M. Hervieu, D. Groult: Crystal Chemistry of High-T c Super-conducting Copper Oxides, Springer Ser.Mater. Sci., Vol.15 (Springer, Berlin, Heidelberg 1991)Google Scholar
  50. 6.50
    K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka, T. Kikkawa: IEEE IEDM (1991) Digest p. 823Google Scholar
  51. 6.51
    J.F. Scott, C.A. Paz de Araujo, B.M. Melnick, L.D. McMillian, R. Zuleeg: J. Appl. Phys. 70, 382 (1991)ADSCrossRefGoogle Scholar
  52. 6.52
    H.N. Al-Shareef, O. Auciello, A.I. Kingon: J. Appl. Phys. 77, 2146 (1995)ADSCrossRefGoogle Scholar
  53. 6.53
    M.R. Poor, A.M. Hurd, C.B. Fleddermann, A. Y. Wu: MRS Proc, 200, 211 (1990)CrossRefGoogle Scholar
  54. 6.54
    Y. Miyasaka: In Integration Technology of Thin Ferroelectric Films, ed. by T. Shiosaki (Science Forum, Tokyo 1992)Chap.2, Sect.2 [in Japanese]Google Scholar
  55. 6.55
    P.-Y. Lesaicherre, S. Yamamichi, H. Yamaguchi, K. Takemura, H. Watanabe, K. Takashiki, K. Satoh, T. Sakuma, M. Yoshida, S. Ohnishi, K. Nakajima, K. Shibahara, Y. Miyasaka, H. Ohno: IEEE IEDM (1994) Digest p.831Google Scholar
  56. 6.56
    R. Moazzami, C. Hu, W.H. Shepherd: IEEE IRPS(1990)Proc. p.231Google Scholar
  57. 6.57
    Y. Furuda, N. Numata, K. Aoki, A. Nishimura: IEEEInt~ Symp. Appl. Ferroe IEE tries(1994)Proc. p. 95Google Scholar
  58. 6.58
    T. Kuroiwa, T. Honda, H. Watarai, K. Sato: Jpn. J. Appl. Phys. 31,3025 (1992)ADSCrossRefGoogle Scholar
  59. 6.59
    K. Abe, S. Komatsu: Jpn. J. Appl. Phys. 31,2985 (1992)ADSCrossRefGoogle Scholar
  60. 6.60
    K. Kulcsar: J. Am. Ceram. Soc. 42, 343 (1959)CrossRefGoogle Scholar
  61. 6.61
    I. H. Pratt, S. Firestore: J. Vac. Sci. Technol. 8, 256 (1971)ADSCrossRefGoogle Scholar
  62. 6.62
    K. Torii, T. Kaga, K. Kushida, H. Takeuchi, E. Takeda: SSDM (1991)Ext. Abstr. p.195Google Scholar
  63. 6.63
    K. Amanuma, T. Mori, T. Hase, T. Sakuma, A. Ochi, Y. Miyasaka: Jpn. J. Appl. Phys. 32, 4150 (1993)Google Scholar
  64. 6.64
    J.T. Evans, R. Womach: IEEE J. SC-23, 1171 (1988)Google Scholar
  65. 6.65
    S. Y. Wu: IEEE Trans. ED-21, 499 (1974)CrossRefGoogle Scholar
  66. 6.66
    T. Nakamura, Y. Nakao, A. Kamisawa, H. Takatsu: IEEE Int’l Symp. Appl. Ferroelectrics (1995)Proc. p. 345Google Scholar
  67. 6.67
    T. Kunio: In Integration Technology of Thin Ferroelectric Films, ed. by T. Shiosaki (Science Forum, Tokyo 1992)Chap. 1, Sect.2 [in Japanese]Google Scholar
  68. 6.68
    W. R. Salaneck: Ferroelectrics 4, 97 (1972)CrossRefGoogle Scholar
  69. 6.69
    H.M. Duiker, D. Beale, J.F. Scott, C.A. Paz de Araujo, B.M. Melnick, J.D. Cuchiano, L.D. McMillian: J. Appl. Phys. 68, 5783 (1990)ADSCrossRefGoogle Scholar
  70. 6.70
    G. Arlt, U. Robels: Integrated Ferroelectrics 3, 343 (1993)CrossRefGoogle Scholar
  71. 6.71
    T. Mihara, H. Yoshimori, H. Watanabe, C.A. Paz de Araujo: Jpn. J. Appl. Phys. 34, 5233 (1995)ADSCrossRefGoogle Scholar
  72. 6.72
    Electronics (February 18, 1988)p. 91Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1997

Authors and Affiliations

  • Takashi Hori
    • 1
  1. 1.Kyoto Research LaboratoryMatsushita Electronics, Inc.Minami-ku,KyotoJapan

Personalised recommendations