Gate Dielectrics and MOS ULSIs pp 297-324 | Cite as
Films with High Dielectric Constants: for Passive Capacitance
Chapter
Abstract
This chapter describes films having dielectric constants higher than SiO2 that are mainly employed for passive capacitance in DRAM memories. For background information, see Sect. 1.3.
Keywords
High Dielectric Constant Spontaneous Polarization Ferroelectric Material Nonvolatile Memory Breakdown Strength
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