Introduction

  • Leonard C. Feldman
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 46)

Abstract

The ages of civilization are denoted by the dominant material of the time; the Stone Age, the Bronze Age and Iron Age. We are now in the Silicon Age. The silicon transistor and development of the integrated circuit have produced a massive change not only in technology and economy, but also in culture and thinking, commensurate with the great materials revolutions of time.

Keywords

Field Effect Transistor Gate Dielectric Ultrathin Film Equivalent Oxide Thickness Si02 Interface 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. 1.
    L. C Feldman, E. P. Gusev, and E. Garfunkel, in “Fundamental Aspects of Ultra-thin Dielectrics on Si-based Devices,” E. Garfunkel, et al., Eds. Kluwer Academic Publ. (1998).Google Scholar
  2. 2.
    H. R. Huff, in H. Z. Massoud, H. lwai, C. Claeys and R. B. Fair (eds.), International ULSI Symposium at the 191st ECS meeting (1997).Google Scholar
  3. 3.
    G. Squires, Physics World 10(4), 33 (1997).Google Scholar
  4. 4.
    L. Hoddeson, History and Technology 11, 121 (1994); Michael Riordan and Lillian Hoddeson, Crystal Fire, W.W. Norton and Company, New York (1997).Google Scholar
  5. 5.
    C. Hu, Proc. of the IEEE 81, 682 (1993).Google Scholar
  6. 6.
    T. Sugano, J. J. Appl. Phys. 32, 261 (1993).Google Scholar
  7. 7.
    Y. Taur, Y. J. Mii, D. J. Frank, H. S. Wong, D. A. Buchanan, S. J. Wind, S. A. Rishton, G. A. Sai-Halasz, and E. J. Nowak, IBM J. Res. Develop. 39, 245 (1995).Google Scholar
  8. 8.
    A. Toriumi, J. Vac. Sci. Technol. B14, 4020 (1996).Google Scholar
  9. 9.
    C. H. Wann, K. Noda, T. Tanaka, M. Yoshida, and C. Hu, IEEE Trans. Electron Devices 43, 1742 (1996).Google Scholar
  10. 10.
    M. T. Bohr, Appl. Surf. Sci. 100/101, 534 (1996).CrossRefGoogle Scholar
  11. 11.
    G. E. Moore, Electronics Magazine 38(8), 114 (1965).Google Scholar
  12. 12.
    R. R. Schaller, IEEE Spectrum 34(6), 52 (1997).CrossRefGoogle Scholar
  13. 13.
    International Technology Roadmap for Semiconductors, Semiconductor Industry Association, (1999 Edition).Google Scholar
  14. 14.
    H. Queisser, The Conquest of the Microchip, Harvard University Press, Cambridge (1988).Google Scholar
  15. 15.
    S. Millman, (Ed.) A History of Engineering and Science in the Bell System, Bell Telephone Labs. (1983).Google Scholar
  16. 16.
    C. J. Frosch and L. Derick, Proc. of the Electrochem. Soc., 547 (1957).Google Scholar
  17. 17.
    S. T. Raider and R. Flitsch, IBM J. Res. Develop, 22, 294 (1978).CrossRefGoogle Scholar
  18. 18.
    Fair, R.B., J. Electrochem. Soc. 128, 1360 (1981).CrossRefGoogle Scholar
  19. 19.
    E. H. Nicollian and I. R. Brews, MOS Physics and Technology, Wiley and Sons (1982).Google Scholar
  20. 20.
    H. Z. Massoud, J. D. Plummer, and E. A. Irene, J. Electrochem. Soc. 132, 2693 (1985).CrossRefGoogle Scholar
  21. 21.
    F. J. Grunthaner and P. J. Grunthaner, Mat. Sci. Rep. 1, 65 (1986).CrossRefGoogle Scholar
  22. 22.
    N. F. Mott, Phil. Mag. B55, 117 (1987).CrossRefGoogle Scholar
  23. 23.
    C. R. Helms and B. E. Deal (Eds.) The Physics and Chemistry of Si and the Si/SiO2 Interface, Plenum Press, NY (1988).Google Scholar
  24. 24.
    E. Irene, Crit. Rev. Sol. St. Mat. Sci. 14, 175 (1988).CrossRefGoogle Scholar
  25. 25.
    P. Balk (Ed.), The Si — Si02 System, Elsevier, Amsterdam (1988).Google Scholar
  26. 26.
    B. E. Deal (1988) Historic perspectives of silicon oxidation, in C. R. Helms and B. E. Deal (Eds.), The Physics and Chemistry of Si02 and the Si — 02 Interface, Plenum Press, NY, p. 5.Google Scholar
  27. 27.
    E. H. Poindexter, Semic. Sci. Technol. 4, 961 (1989).CrossRefGoogle Scholar
  28. 28.
    W. B. Fowler, Rev. Sol. St. Sci. 5, 435 (1991).Google Scholar
  29. 29.
    C. R. Helms and B. E. Deal (Eds.) The Physics and Chemistry of Si02 and theSi— Si02 Interface Plenum Press, NY (1993).Google Scholar
  30. 30.
    T. Engel, Surf. Sci. Rep. 18, 91 (1993).CrossRefGoogle Scholar
  31. 31.
    C. R. Helms and E. H. Poindexter, Rep. Prog. Phys. 57, 791 (1994).CrossRefGoogle Scholar
  32. 32.
    C. J. Sofield and A. M. Stoneham, Semic. Sci. Technol. 10, 215 (1995).CrossRefGoogle Scholar
  33. 33.
    T. Hattori, CRC Crit. Rev. Solid State Mater. Sci. 20, 339 (1995).CrossRefGoogle Scholar
  34. 34.
    P. Balk, Advanced Materials 7, 703 (1995).CrossRefGoogle Scholar
  35. 35.
    H. Z. Massoud, E. H. Poindexter, and C. R. Helms, (eds) The Physics and Chemistry of Si02 the Si — Si02 Interface - 3, The Electrochemical Society, Pennington, NJ (1996).Google Scholar
  36. 36.
    T. Hon, Gate Dielectrics and MOS ULSI, Springer, Berlin (1997).Google Scholar
  37. 37.
    J. F. Conley and P. M. Lenahan, in H. Z. Massoud, E. H. Poindexter and C. R. Helms (Eds.), The Physics and Chemistry of Si02 and the Si — Si02 Interface - 3, The Electrochemical Soc., Pennington, NJ, p. 214 (1996).Google Scholar
  38. 38.
    N. F. Mott, S. Rigo, F. Rochet and A. M. Stoneham, Phil. Mag. B60,, 189 (1989).CrossRefGoogle Scholar
  39. 39.
    T. R. Oldham, F. B. McLean, Jr, H. E. Boesch, Jr, and J. M. McGarfity, Semic. Sci. Technol. 4, 986 (1989).CrossRefGoogle Scholar
  40. 40.
    W. Weber and M. Brox, MRS Bulletin 12, 36 (1993).Google Scholar
  41. 41.
    A. Stesmans, Semic. Sci. Technol. 4, 1000 (1989).CrossRefGoogle Scholar
  42. 42.
    B. E. Deal and A. S. Grove, J. Appi. Phys. 36, 3770 (1965).CrossRefGoogle Scholar
  43. 43.
    A. Y. Vul’, T. L. Makarova, V. Y. Osipov, Y. S. Zinchik and S. K. Boitsov, Soy. Phys. Semicond. 26, 62 (1992).Google Scholar
  44. 44.
    F. Rochet, S. Rigo, M. Froment, C. d’Anterroches, C. Maillot, H. Roulet and G. Dufour, Adv. Phys. 35,, 339 (1986).CrossRefGoogle Scholar
  45. 45.
    K. J. Hebert, T. Labayen and E. A. Irene, in H. Z. Massoud, E. H. Poindexter and C. R. Helms (Eds.), The Physics and Chemistry of Si02 and the Si / Si02 Interface - 3, The Electrochemical Society, Pennington, NJ, pp. 81 (1996).Google Scholar
  46. 46.
    D. R. Wolters and A. T. A. Zegers van Duynhoven, Appi. Surf Sci. 39, 81 (1989).CrossRefGoogle Scholar
  47. 47.
    T. Dutta and N. M. Ravindra, Phys. Stat. Sol. 134, 447 (1992).CrossRefGoogle Scholar
  48. 48.
    S. C. Kao and R. H. Doremus in C. R. Helms and B. E. Deal (Eds.), The Physics and Chemistry of Si02 and the Si — Si02 interface, Plenum Press, NY p. 23 (1993).Google Scholar
  49. 49.
    J. M. Delarious, C. R. Helms, D. B. Kao, and B. E. Deal, Appi. Surf. Sci. 39, 89 (1989).CrossRefGoogle Scholar
  50. 50.
    H. Z. Massoud, J. D. Plummer, and E. A. Irene, J. Electrochem. Soc. 132, 1745 (1985).CrossRefGoogle Scholar
  51. 51.
    E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, Phys. Rev. B 104/105, 329 (1995).CrossRefGoogle Scholar
  52. 52.
    E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, Phys. Rev. B 52, 1759 (1995).CrossRefGoogle Scholar
  53. 53.
    C. J. Han and C. R. Helms, J. Electrochem. Soc. 135, 1824 (1988).CrossRefGoogle Scholar
  54. 54.
    E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, in H. Z. Massoud, E. H. Poindexter and C. R. Helms (Eds.), The Physics and Chemistry ofSi02 and the Si — Si02 Interface - 3, The Electrochem. Soc., Pennington, NJ, p. 49 (1996).Google Scholar
  55. 55.
    I. Trimaille and S. Rigo, Appl. Surf. Sci. 39, 65 (1989).CrossRefGoogle Scholar
  56. 56.
    J. J. Ganem, G. Battistig, S. Rigo, and I. Trimaille, Appl. Surf. Sci. 65/66, 647 (1993).CrossRefGoogle Scholar
  57. 57.
    J. J. Ganem, I. Trimaille, P. Andre, S. Rigo, F. C. Stedile, and I. J. R. Baumvol, J. Appl. Phys. 81, 8109 (1997).CrossRefGoogle Scholar
  58. 58.
    J. M. Gibson and M. Y. Lanzerotti, Nature 340, 128 (1989).CrossRefGoogle Scholar
  59. 59.
    F. M. Ross and J. M. Gibson, Phys. Rev. Lett. 68, 1782 (1992); and F. M. Ross, J. M. Gibson, and R-D. Twesten, Surf. Sci. 310, 243 (1994).CrossRefGoogle Scholar
  60. 60.
    Alfredo Pasquarello, Mark S. Hybertsen, and Roberto Car, Nature, 396, 58 (1998), D. Hammond, Phys. Rev. Lett. 81, 3447, (1998); and R. M. C. de Almeida, S. Goncalves, I. J. R. Baumvol, and F. C. Stedile, Surf. Sci. Reports 36, 1 (1999).CrossRefGoogle Scholar
  61. 61.
    H. C. Lu, T. Gustafsson, E. P. Gusev, and E. Garfunkel, Appl. Phys. Lett. 67, 1742 (1995).CrossRefGoogle Scholar
  62. 62.
    H. C. Lu, E. P. Gusev, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen, and L. C. Feldman, Appl. Phys. Lett. 69, 2713 (1996).CrossRefGoogle Scholar
  63. 63.
    T. Gustafsson, E. Garfunkel, E. P. Gusev, P. Haberle, H. C. Lu, and J. B. Zhour, Surf. Rev. Lett., 3, 1561 (1996).CrossRefGoogle Scholar
  64. 64.
    R. J. Hussey, D. A. Bisaillion, G. I. Sproule, and M. J. Graham, Corros. Sci. 35, 917 (1993).CrossRefGoogle Scholar
  65. 65.
    J. D. Plummer, in H. Z. Massoud, E. H. Poindexter and C. R. Helms (Eds.), The Physics and Chemistry of Si02 and the Si —Si02 Interface - 3, The Electrochemical Society, Pennington, NJ (1996).Google Scholar
  66. 66.
    F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B, 38, 6084 (1988).CrossRefGoogle Scholar
  67. 67.
    F. R. McFeely, K. Z. Zhang, M. M. Banaszak-Hall, S. Lee, and J. E. Bender-IV, J. Vac. Sci. Technol. B 14, 2824 (1996).CrossRefGoogle Scholar
  68. 68.
    A. Pasquarello, M. S. Hybertsen, and R. Car, Phys. Rev. Lett. 74, 1024 (1995).CrossRefGoogle Scholar
  69. 69.
    L. C. Feldman, P. J. Silverman, J. Williams, T. E. Jackman, and I. Stensgaard, Phys. Rev. Lett., 41, 1396 (1978); R. Haight, W. M. Gibson, T. Narusawa and L. C. Feldman, J. Vac. Sci. and Tech. 18, 973 (1980); N. W. Cheung, L. C. Feldman, P. J. Silverman, and I. Stensgaard, Apl. Phys. Lett. 35, 859 (1979); T. E. Jackman, J. R. MacDonald, L. C. Feldman, P. J. Silverman, and I. Stensgaard, Surf. Sci. 100, 35 (1980); R. Haight and L. C. Feldman, J. Appl. Phys. 53, 4884 (1982); and L. C. Feldman, The Stoichiometry and Structure of the Si02/SiInterface: Ion Scattering Studies, in C. R. Helms and B. E. Deal (Eds.), The Physics and Chemistry of Si02 and the Si — Si02 Interface, Plenum Press, NY p. 199 (1988).CrossRefGoogle Scholar
  70. 70.
    Young Pil Kim, Si Kyung Choi, Hyun Kyong Kim, and Dae Won Moon, Apl. Phys. Lett. 71, 3504, (1997).CrossRefGoogle Scholar
  71. 71.
    N. D. Browning, M. F. Chisholm, and S. J. Pennycook, Nature 366, 143 (1993).CrossRefGoogle Scholar
  72. 72.
    P. E. Batson, N. D. Browning, and D. Muller, Microsc. Soc. Amer. Bulletin 24, 371 (1994).Google Scholar
  73. 73.
    A. Munkholm, S. Brennan, F. Comm, and L. Ortega, Phys. Rev. Lett. 75 (1994).Google Scholar
  74. 74.
    I. Takahashi, T. Shimura, and J. Harada, Phys. Condensed Matter 5, 6525 (1993).CrossRefGoogle Scholar
  75. 75.
    J. P. Peng, K. G. Lynn, P. Asoka-Kumar, D. P. Becker, and D. Harshman, Phys. Rev. Lett. 76, 2157 (1996).CrossRefGoogle Scholar
  76. 76.
    K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gureyich, J. Sapjeta, R. L. Opila, J. of Appl. Phys., 87, 1322 (2000).CrossRefGoogle Scholar
  77. 77.
    K. T. Queeney, Y. J. Chabal, M. K. Weldon, K. Ragliayachari, Phys. Stat. Sol. A, 175, 77 (1999).CrossRefGoogle Scholar
  78. 78.
    K. Raghavachari, A. Pasquarello, J. Eng. Jr., M. S. Hybertsen, Appl. Phys. Lett., 76, 3873 (2000).CrossRefGoogle Scholar
  79. 79.
    A. Pasquarello, M. S. Hybertsen, R. Car, Nature, 396, 58 (1998).CrossRefGoogle Scholar
  80. 80.
    A. Pasquarello, M. S. Hybertsen, R. Car, Appl. Surf. Sci., 104–105, 317 (1996).CrossRefGoogle Scholar
  81. 81.
    R. Buczko, S. J. Pennycook and S. T. Pantelides, tuspivn, Phys. Rev. Lett., 59, 943 (2000).CrossRefGoogle Scholar
  82. 82.
    Y. Tu and J. Tersoff, Phys. Rev. Lett., 84, 4393 (2000).CrossRefGoogle Scholar

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© Springer-Verlag Berlin Heidelberg 2001

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  • Leonard C. Feldman

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