Modeling of Ion-Induced Charge Generation in High Voltage Diodes

  • W. Kaindl
  • G. Sölkner
  • G. Wachutka
Conference paper
Part of the Lecture Notes in Computational Science and Engineering book series (LNCSE, volume 21)


Additional terms have to be added to the right-hand sides of the carrier balance equations for electrons and holes in order to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial distribution of the device-internal electric field initiated by an intruding ion. For small reverse biases the charge generated within the device corresponds to the total absorption of the ion’s kinetic energy. Applying a sufficiently high reverse bias a steep field peak forms which is able to propagate through the whole device with an undiminished peak height. Due to the corresponding strong avalanche multiplication a large amount of additional charge can be generated. The results obtained from our device simulations conform well to recent experimental findings


Reverse Bias Field Peak Avalanche Generation Onset Voltage Electric Field Peak 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • W. Kaindl
    • 1
  • G. Sölkner
    • 2
  • G. Wachutka
    • 1
  1. 1.Institute for Physics of ElectrotechnologyMunich University of TechnologyMunichGermany
  2. 2.Infineon Technologies AGPower SemiconductorsMunichGermany

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