Realistic Step Flow Model for Orientation-Dependent Wet Etching
We present a new simulation tool for orientation-dependent etching of silicon. The implemented algorithm is based on a model proposed by Schröder , which can explain the convex corner undercutting in pure aqueous KOH solutions. Essential is the experimental observation that the so called fast etching planes, which hitherto were assumed to cause the characteristic shape of under-etched convex etchmask corners, are not really crystallographic planes. Referring to some basic examples we demonstrate that our simulation approach using this “step flow model of 3D structuring” is able to reproduce the detailed morphology of the etched structures
KeywordsEtching Process Material Index Laser Micromachining Etch Mask Convex Corner
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