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Realistic Step Flow Model for Orientation-Dependent Wet Etching

  • A. Horn
  • G. Wachutka
Conference paper
Part of the Lecture Notes in Computational Science and Engineering book series (LNCSE, volume 21)

Abstract

We present a new simulation tool for orientation-dependent etching of silicon. The implemented algorithm is based on a model proposed by Schröder [1], which can explain the convex corner undercutting in pure aqueous KOH solutions. Essential is the experimental observation that the so called fast etching planes, which hitherto were assumed to cause the characteristic shape of under-etched convex etchmask corners, are not really crystallographic planes. Referring to some basic examples we demonstrate that our simulation approach using this “step flow model of 3D structuring” is able to reproduce the detailed morphology of the etched structures

Keywords

Etching Process Material Index Laser Micromachining Etch Mask Convex Corner 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    H. Schröder, E. Obermeier, Workshop on Physical Chemistry of Wet Chemical Etching of Silicon, Holten, 1998, Book of Abstracts, pp 31–32Google Scholar
  2. 2.
    H. Schröder, PhD Thesis, Technical University of Berlin, 2000Google Scholar
  3. 3.
    Strasser, E., Selberherr, S., 123456 IEEE Trans. on CAD of Integrated Circuits and Systems, Vol. 14, 9, (1995), pp 1104–1114CrossRefGoogle Scholar
  4. 4.
    Strasser, E., Selberherr, S., Proc. of SISDEP-93, Vienna, Austria, in Simulation of Semiconductor Devices and Processes, Eds.: S. Selberherr, H. Stippel, E. Strasser, (Springer Verlag, Wien, 1993), pp. 357–360, 1993CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • A. Horn
    • 1
  • G. Wachutka
    • 1
  1. 1.Institute for Physics of ElectrotechnologyMunich University of TechnologyMünchenGermany

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