Semiconductor Lasers and Theory

Chapter
First Online:
Part of the Springer Series in Optical Sciences book series (SSOS, volume 111)

Abstract

We derive the essential rate equations of complex field and carrier density for semiconductor lasers. The lasers we discuss here are narrow-stripe edge-emitting types, which are categorized into stable class B lasers. We introduce important device parameters that affect the dynamics of the lasers and also treat fundamental characteristics of solitary semiconductor lasers. The noise effects of the lasers and some other topics related to the dynamics are discussed.

Keywords

Spontaneous Emission Carrier Density Semiconductor Laser Photon Number Relaxation Oscillation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. Agrawal GP (1985) Chirp minimization and optimum biasing for current-modulated coupled-cavity semiconductor lasers. Opt Lett 1:10–12ADSCrossRefGoogle Scholar
  2. Agrawal GP, Dutta NK (1993) Semiconductor lasers. Van Nostrand Reinhold, New YorkGoogle Scholar
  3. Arakawa Y, Yariv A (1985) Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers. IEEE J Quantum Electron 21:1666–1674ADSCrossRefGoogle Scholar
  4. Arnold G, Russer P, Petermann K (1982) Modulation of laser diodes. In: Kressel H (ed) Semiconductor devices for optical communication. Chap. 7. Ed. Springer-Verlag, BerlinGoogle Scholar
  5. Boers PM, Vlaardinerbrek MT (1975) Dynamic behavior of semiconductor lasers. Electron Lett 11:206–208ADSCrossRefGoogle Scholar
  6. Botez D (1981) InGaAsP/InP double-heterosturcture lasers: Simple expressions for wave confinement, beamwidth, and threshold current over wide range in wavelength (1.1–1.65\(\mu \)m). IEEE J Quantum Electron 17:178–186ADSCrossRefGoogle Scholar
  7. Buss J, Adams MJ (1979) Phase and group indices for double heterostructure lasers. Solid-State Electron Dev 3:189–195Google Scholar
  8. Chinone N, Aiki K, Nakamura M, Ito R (1978) Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers. IEEE J Quantum Electron 14:625–631ADSCrossRefGoogle Scholar
  9. Chow WW, Koch SW, Sargent M III (1993) Semiconductor laser physics. Springer-Verlag, New YorkGoogle Scholar
  10. Cook DD, Nash FR (1975) Gain-induced guiding and astigmatic output beam of GaAs lasers. J Appl Phys 46:1660–1672ADSCrossRefGoogle Scholar
  11. Dutta NK, Olsson NA, Koszi LA, Besomi P, Wilson RB (1984) Frequency chirp under current modulation in InGaAsP injection lasers. J Appl Phys 56:2167–2169ADSCrossRefGoogle Scholar
  12. Elsäßer W, Göbel EO (1984) Spectral linewidth of gain- and index-guided InGaAs semiconductor lasers. Appl Phys Lett 45:353–355ADSCrossRefGoogle Scholar
  13. Elsäßer W, Göbel EO (1985) Multimode effects in the spectral linewidth of semiconductor lasers. IEEE J Quantum Electron 21:687–692ADSCrossRefGoogle Scholar
  14. Fleming MW, Mooradian A (1981a) Fundamental line broadening of single-mode (AaAl)As diode lasers. Appl Phys Lett 38:511–513ADSCrossRefGoogle Scholar
  15. Fleming MW, Mooradian A (1981b) Spectral characteristics of external-cavity controlled semiconductor lasers. IEEE J Quantum Electron 17:44–59ADSCrossRefGoogle Scholar
  16. Furuya K, Suematsu Y, Sakakibara Y, Yamada M (1979) Influence of intraband electronic relaxation on relaxation oscillation of injection lasers. Trans IECE Jpn E-62:241–245Google Scholar
  17. Haug H (1969) Quantum-mechanical rate equations for semiconductor lasers. Phys Rev 184:338–348ADSCrossRefGoogle Scholar
  18. Henry CH (1982) Theory of the linewidth of semiconductor lasers. IEEE J Quantum Electron 18:259–264ADSCrossRefGoogle Scholar
  19. Henry CH (1983) Theory of phase noise and power spectrum of a single mode injection laser. IEEE J Quantum Electron 19:1391–1397ADSCrossRefGoogle Scholar
  20. Henry CH (1986) Theory of spontaneous emission noise in open resonators and its applications to lasers and optical amplifiers. J Lightwave Technol 4:288–297ADSCrossRefGoogle Scholar
  21. Ikegami T, Suematsu Y (1967) Resonance-like characteristics of the direct modulation of a junction laser. Proc IEEE 55:122–133CrossRefGoogle Scholar
  22. Ikegami T, Suematsu Y (1968) Carrier lifetime measurement of a junction laser using direct modulation. IEEE J Quantum Electron 4:148–151ADSCrossRefGoogle Scholar
  23. Kallimani KI, O’Mahony MJ (1998) Relative intensity noise for laser diodes with arbitrary amounts of optical feedback. IEEE J Quantum Electron 34:1438–1446ADSCrossRefGoogle Scholar
  24. Kazarinov RF, Henry CH (1987) The relation of line narrowing and chirp reduction resulting from coupling of a semiconductor laser to a passive resonator. IEEE J Quantum Electron 23:1401–1409ADSCrossRefGoogle Scholar
  25. Kirkby PA, Goodwin AR, Thompson GHB, Selway PR (1977) Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operation. IEEE J Quantum Electron 13:705–719ADSCrossRefGoogle Scholar
  26. Lang R (1979) Lateral transverse mode instability and its stabilization in stripe geometry injection laser. IEEE J Quantum Electron 15:718–726ADSCrossRefGoogle Scholar
  27. Lau KY, Yariv A (1985) Ultra-high speed semiconductor lasers. IEEE J Quantum Electron 21:121–138ADSCrossRefGoogle Scholar
  28. Lax M (1960) Fluctuations from the nonequilibrium steady state. Rev Mod Phys 32:25–64ADSCrossRefMATHGoogle Scholar
  29. Lax M, Louisell WH (1969) Quantum noise, XII. Density-operator treatment of field and population fluctuations. Phys Rev 185:568–591ADSCrossRefGoogle Scholar
  30. Linke AR (1985) Modulation induced transient chirping in single frequency lasers. IEEE J Quantum Electron 21:593–597ADSCrossRefGoogle Scholar
  31. Marcuse D, Lee TP (1983) On approximate analytical solutions of rate equations for studying transient spectra of injection lasers. IEEE J Quantum Electron 19:1397–1406ADSCrossRefGoogle Scholar
  32. McCall SL, Platzman PM (1985) An optimized \(\pi /2\) distributed feedback laser. IEEE J Quantum Electron 21:1899–1894ADSCrossRefGoogle Scholar
  33. McCmber DE (1966) Intensity fluctuations in the output of cw laser oscillators I. Phys Rev 141:306–322ADSCrossRefGoogle Scholar
  34. Nakamura M, Aiki K, Chinone N, Ito R, Umeda U (1978) Longitudinal-mode behaviors of mode stabilized \(\text{Al}_{x}\text{Ga}_{1-x}\)As injection lasers. J Appl Phys 49:4644–4548ADSCrossRefGoogle Scholar
  35. Osinski M, Buss J (1987) Linewidth broadening factor in semiconductor lasers—an overview. IEEE J Quantum Electron 23:9–29ADSCrossRefGoogle Scholar
  36. Paoli TL, Ripper JE (1970) Direct modulation of semiconductor lasers. Proc IEEE 58:1457–1465CrossRefGoogle Scholar
  37. Papoulis A (1984) Probability, random variables, and stochastic processes. McGraw-Hill, New YorkMATHGoogle Scholar
  38. Petermann K (1979) Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguiding. IEEE J Quantum Electron 15:566–570MathSciNetADSCrossRefGoogle Scholar
  39. Petermann K (1988) Laser diode modulation and noise. Kluwer Academic, DordrechtCrossRefGoogle Scholar
  40. Petermann K, Arnold G (1982) Noise and distortion characteristics of semiconductor lasers in optical fiber communication systems. IEEE J Quantum Electron 18:543–555ADSCrossRefGoogle Scholar
  41. Risken H (1996) The Fokker-Planck equation: methods of solution and applications. Springer-Verlag, BerlinMATHGoogle Scholar
  42. Saleh B (1978) Photoelectron statistics. Springer-Verlag, BerlinGoogle Scholar
  43. Schunk N, Petermann K (1986) Noise analysis of injection-locked semiconductor injection lasers. IEEE J Quantum Electron 22:642–650ADSCrossRefGoogle Scholar
  44. Thompson GHB (1980) Physics of semiconductor laser devices. Wiley, ChichesterGoogle Scholar
  45. Tucker RS (1985) High-speed modulation of semiconductor lasers. J Lightwave Technol 3:1180–1192ADSCrossRefGoogle Scholar
  46. Uomi K, Chinone N, Ohtoshi T, Kajimura T (1985) High relaxation oscillation frequency (beyond 10 GHz) of GaAlAs multiquantum well lasers. Jpn J Appl Phys 24:L539–541ADSCrossRefGoogle Scholar
  47. Vahala K, Yariv A (1983a) Semiclassical theory of noise in semiconductor lasers—part I. IEEE J Quantum Electron 19:1096–1101ADSCrossRefGoogle Scholar
  48. Vahala K, Yariv A (1983b) Semiclassical theory of noise in semiconductor lasers—part II. IEEE J Quantum Electron 19:1102–1109ADSCrossRefGoogle Scholar
  49. Vahala K, Harder C, Yariv A (1983) Observation of relaxation resonance effects in the field spectrum of semiconductor lasers. Appl Phys Lett 42:211–213ADSCrossRefGoogle Scholar
  50. Yamamoto Y (1983) AM and FM quantum noise in semiconductor lasers—part I: theoretical analysis. IEEE J Quantum Electron 19:34–46ADSCrossRefGoogle Scholar
  51. Yariv A, Yeh P (2007) Photonics: optical electronics in modern communications, 6th edn. Oxford University Press, OxfordGoogle Scholar
  52. Yoon TH, Lee CH, Shin SY (1989) Perturbation analysis of bistable and period doubling bifurcation in directly-modulated laser diodes. IEEE J Quantum Electron 25:1993–2000ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Faculty of EngineeringShizuoka UniversityHamamatsu, ShizuokaJapan

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