Application of the Model to Carrier Profiling

Chapter
Part of the Springer Theses book series (Springer Theses)

Abstract

In this chapter, the insights of the previous chapters are put together in order to solve the inverse problem. In other words, in this chapter, we show how to deduce information about unknown active doping profiles based on TP measurements.

Keywords

Doping Concentration Layer Plasma Thermal Component Junction Depth Dope Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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    J. Bogdanowicz, F. Dortu, T. Clarysse, W. Vandervorst, E. Rosseel, N.D. Nguyen, D. Shaughnessy, A. Salnik, L. Nicolaides, Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves. J. Vac. Sci. Technol. B 28(1), C1C1–C1C7 (2010)CrossRefGoogle Scholar
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    M. Heath, Scientific Computing, an Introductory Survey (McGraw-Hill, New York, 1997)Google Scholar
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    M. Abramowitz, I. Stegun, Handbook of Mathematical Functions (Dover, New York, 1964)MATHGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.IMECLeuvenBelgium

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