A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy

  • Lado Filipovic
  • Siegfried Selberherr
Conference paper
Part of the Lecture Notes in Computer Science book series (LNCS, volume 7116)

Abstract

Nanolithography using Non-Contact Mode Atomic Force Microscopy (NCM-AFM) is a promising method for the manufacture of nanometer sized devices. Compact models which suggest nanopatterned oxide dots with Gaussian or Lorentzian profiles are implemented in a Monte Carlo simulator in a level set environment. An alternative to compact models is explored with a physics based Monte Carlo model, where the AFM tip is treated as a point charge and the silicon wafer as an infinite conducting plane. The strength of the generated electric field creates oxyions which accelerate towards the silicon surface and cause oxide growth and surface deformations. A physics based model is presented, generating an oxide dot based on the induced surface charge density. Comparisons to empirical models suggest that a Lorentzian profile is better suited to describe surface deformations when compared to the Gaussian profile.

Keywords

Silicon Surface Apply Physic Letter Compact Model Local Anodic Oxidation Base Monte Carlo Approach 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • Lado Filipovic
    • 1
    • 2
  • Siegfried Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTechnische Universität WienWienAustria
  2. 2.Christian Doppler Laboratory for Reliability Issues in Microelectronics at the Institute for MicroelectronicsWienAustria

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