Electronic Transport on the Nanoscale

  • C. A. Bobisch
  • A. M. Bernhart
  • M. R. Kaspers
  • M. C. Cottin
  • J. Schaffert
  • R. MöllerEmail author
Conference paper
Part of the Advances in Atom and Single Molecule Machines book series (AASMM)


A scanning tunneling microscope with several tips is ideally suited to analyze the electronic transport through objects on the nanoscale. Two different configurations will be discussed. The lateral transport of electrons may be studied by using two tips to drive a current parallel to the surface. A third tip enables to map the corresponding electrochemical potential μ ec. Measurements for a 2D conducting layer will be discussed. To analyze the transport perpendicular to the surface, a thin metallic layer is placed on a semiconducting surface. At the interface a Schottky barrier is formed, which can only be overcome by electrons of sufficient energy. This may be used to split the tunneling current coming from the tip of the microscope, into the ballistic electrons and the electrons which underwent inelastic scattering processes. This technique has been applied to study the ballistic transport of electrons through a thin epitaxial Bi(111) layer as well as through individual molecules.


Lower Unoccupied Molecular Orbital Schottky Barrier Metal Film Tunneling Current Mean Free Path 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



The work has been supported by the Deutsche Forschungsgemeinschaft (DFG) through the Sonderforschungsbereich 616 “Energy Dissipation at Surfaces”. Additional support to M.C.C. is granted by the Studienstiftung des deutschen Volkes. D. Utzat is gratefully acknowledged for designing and constructing the STM electronics. We gratefully acknowledge M. Wenderoth for stimulating discussions and providing the simulations for the Ohmic network.


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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • C. A. Bobisch
    • 1
  • A. M. Bernhart
    • 1
  • M. R. Kaspers
    • 1
  • M. C. Cottin
    • 1
  • J. Schaffert
    • 1
  • R. Möller
    • 1
    Email author
  1. 1.Faculty of Physics, Center for Nanointegration Duisburg-EssenUniversity of Duisburg-EssenDuisburgGermany

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