CES3 2011, CA 2011: Control and Automation, and Energy System Engineering pp 96-101 | Cite as
Structural and Electrical Properties of High Temperature Polycrystalline Silicon Films on Molybdenum Substrate
Abstract
For the photovoltaic application, a technique of high temperature crystallization was proposed to change from amorphous to polycrystalline silicon. We investigated the structural and electrical properties of the poly-Si thin films on Molybdenum (Mo) substrate using a direct resistive heating process. The hydrogenated amorphous silicon films were crystallized in the temperature range of 750°C to 1050°C. As the crystallization temperature increases, the intensity of the peaks for (111) orientation has strongly observed. Improvement of the crystallinity over 75% has been noticed. Photo conductivity and dark conductivity decreased with the increase in substrate temperature.
Keywords
Molybdenum Direct resistive heating (DRH) Sputtering PhotosensitivityPreview
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