Recent Advances in High-Voltage GaN MOS-Gated Transistors for Power Electronics Applications

Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 156)

Abstract

The recent progress and present status of the development of high-voltage lateral power GaN field-effect transistors for power switching applications are reviewed and discussed. The basic device structures explored and the performance improvement in blocking voltage and specific on-resistance over the last few years are presented. The technical challenges and reliability issues that still need to be addressed are pointed out.

Keywords

Breakdown Voltage Drift Region Surface Electric Field Conventional HEMTs Main Structural Variant 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgement

This work was supported by SRC (Task 1961.001) and the NSF ERC on Smart Lighting (Award #EEC-0812056).

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Department of Electrical, Computer and Systems EngineeringRensselaer Polytechnic InstituteTroyUSA

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