InGaN Technology for IBSC Applications

  • C. Thomas Foxon
  • Sergei V. Novikov
  • Richard P. Campion
Chapter
Part of the Springer Series in Optical Sciences book series (SSOS, volume 165)

Abstract

In this chapter, we will discuss the possible application ofInGaN:Mn layers for Intermediate Band Solar Cell devices. We will consider the reasons for choosing to study this promising system; why plasma-assisted molecular beam epitaxy is the method of choice to produce such structures; the specific problems associated with InGaN growth and the progress made so far in achieving this objective. We also discuss briefly other possible dopants for IBSCs based on InGaN.

Keywords

Active Nitrogen Internal Electric Field InGaN Film Charge Neutrality Level Molecular Beam Epitaxy Method 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • C. Thomas Foxon
    • 1
  • Sergei V. Novikov
    • 2
  • Richard P. Campion
    • 2
  1. 1.School of Physics and AstronomyUniversity of NottinghamNottinghamUK
  2. 2.School of Physics and AstronomyUniversity of NottinghamNottinghamUK

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