Inverse Doping Profile of MOSFETs via Geometric Programming
In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET’s DC characteristics including the on- and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.
KeywordsGeometric Programming Doping Profile Subthreshold Swing Monomial Function Channel Doping
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This work was supported in part by Taiwan National Science Council (NSC) under Contract NSC-97-2221-E-009-154-MY2 and NSC-99-2221-E-009-175.
- 1.Sze, S.M.: Physics of Semiconductor Device, 2nd edn., Wiley, New York (1981)Google Scholar
- 3.Li. Y., Yu, S.M.: A coupled-simulation-and-optimization approach to nanodevice fabrication with minimization of electrical characteristics fluctuation. IEEE Trans. Semiconductor Manufacturing 20, 432–438 (2007)Google Scholar
- 5.Lahaye, D.J.P., Drago, C.R.: Exploiting model hierarchy in semiconductor design using manifold mapping. In: Roos, J., Costa, L. (eds.) Scientific Computing in Electrical Engineering SCEE 2008, vol. 20, pp. 445–452 (2010)Google Scholar
- 8.Boyd, S., Vandenberghe, L.: Convex Optimization, Cambridge, UK (2004)Google Scholar