Inverse Doping Profile of MOSFETs via Geometric Programming

  • Yiming Li
  • Ying-Chieh Chen
Part of the Mathematics in Industry book series (MATHINDUSTRY, volume 16)


In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET’s DC characteristics including the on- and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.


Geometric Programming Doping Profile Subthreshold Swing Monomial Function Channel Doping 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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This work was supported in part by Taiwan National Science Council (NSC) under Contract NSC-97-2221-E-009-154-MY2 and NSC-99-2221-E-009-175.


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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  1. 1.Department of Electrical EngineeringNational Chiao-Tung UniversityHsinchu 300Taiwan

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