Advertisement

Computational Statistics Approach to Capacitance Sensitivity Analysis and Gate Delay Time Minimization of TFT-LCDs

  • Yiming Li
  • Hsuan-Ming Huang
Conference paper
Part of the Mathematics in Industry book series (MATHINDUSTRY, volume 14)

Abstract

In this paper, we practically implement a systematical method for thin-film transistor liquid-crystal display (TFT-LCD) design optimization and sensitivity analysis. Based upon a three-dimensional (3D) field solver and a Design of Experiments, we construct a second-order response surface model (RSM) to examine the capacitances’ effect on the performance of an interested TFT-LCD pixel. The constructed RSMs are reduced using a step-wise regression. We verify the accuracy using the normal residual plots and their residual of squares. According to the models, we then analyze the sensitivity of the capacitances by considering the design parameters as changing factors (i.e., the size variation and the position shift) under an assumption of Gaussian distribution. Consequently, we further apply the models to optimize the designed circuit. The designing parameters of these models are selected and optimized to fit the designing target of the examined circuit by the genetic algorithm in our unified optimization framework. This computational statistics method predicts the capacitances’ effects on the gate delay time and compares with full 3D simulation approaches, it shows the engineering practicability in display panel industry.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Boning, D.S. and Mozumder, P.K.: DOE/Opt: A System for Design of Experiments, Response Surface Modeling, and Optimization Using Process and Device Simulation. IEEE Trans. Semiconductor Manufacturing, 7(2), 233–244 (1994)CrossRefGoogle Scholar
  2. 2.
    Box, G.E.P. and Draper, N.R.: Empirical Model-Building and Response Surfaces, Wiley, New York (1987)zbMATHGoogle Scholar
  3. 3.
    Daniel, C.: Use of Half-normal Plots in Interpreting Factorial Two-level Experiments. Technometrics, 1, 311–341 (1959)CrossRefMathSciNetGoogle Scholar
  4. 4.
    Dodgson, J.H.: A Graphical Method for Assessing Mean Squares in Saturated Fractional Designs. Journal of quality technology, 35, 206–212 (2003)Google Scholar
  5. 5.
    Engineering Statistics Handbook [Online]. URL http://www.itl.nist.gov/div898/handbook/
  6. 6.
    Li, Y., Chou, H.-M., Lee, J.-M. and Lee, B.-S.: A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors. Microelectronic Engineering, 81, 434–440 (2005)CrossRefGoogle Scholar
  7. 7.
    Li, Y. and Chou, Y.-S.: A Novel Statistical Methodology for Sub-100 nm MOSFET Fabrication Optimization and Sensitivity Analysis. In: Ext. Abs. 2005 Int. Conf. Solid State Devices and Materials, pp. 622–623 (2005)Google Scholar
  8. 8.
    Li, Y., Li, Y.-L. and Yu, S.-M.: Design optimization of a current mirror amplifier integrated circuit using a computational statistics technique. Mathematics and Computers in Simulation, 79, 1165-1177 (2008)zbMATHCrossRefGoogle Scholar
  9. 9.
    Li, Y., Yu, S.-M. and Li, Y.-L.: Electronic design automation using a unified optimization framework. Mathematics and Computers in Simulation, doi:10.1016/j.matcom.2007.11.001 (2007)Google Scholar
  10. 10.
    Li, Y: An automatic parameter extraction technique for advanced CMOS device modeling using genetic algorithm. Microelectronic Engineering, 84(2), 260–272 (2007)CrossRefGoogle Scholar
  11. 11.
    Myers, R.H. and Montgomery, D.C.: Response Surface Methodology: Process and Product Optimization Using Designed Experiments, John Wiley Sons Inc., New York (2002)zbMATHGoogle Scholar
  12. 12.
    Plackett, R.L. and Burman, J.P.: The design of optimum multifactorial experiments. Biometrika, 33, 305–325 (1946)zbMATHCrossRefMathSciNetGoogle Scholar
  13. 13.
    Wu, I.-W.: Polycrystalline silicon thin film transistors for liquid crystal displays. Solid State Phenomena, 37-38, 553–564 (1994)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  1. 1.Department of Communication EngineeringNational Chiao Tung UniversityHsinchu 300Taiwan

Personalised recommendations