Zinc Oxide pp 121-168 | Cite as

Intrinsic Linear Optical Properties Close to the Fundamental Absorption Edge

Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 120)

Abstract

In this chapter, we review the intrinsic linear optical properties of ZnO close to the fundamental absorption edge. This comprises band-to-band transitions and free excitons and polaritons in bulk samples and epitaxial layers; free and localized excitons and polaritons in quantum wells and wires, including nanorods; also localized excitons in alloys and in quantum dots (or nano crystals) and finally cavity polaritons. By the term “free excitons”, we mean the quanta of the intrinsic electronic excitation in semiconductors (and insulators), which can move freely through the sample and which are described by a plane wave factor exp(i Kr) in d dimensions (d = 3, 2 or 1), where K is the wave vector of the centre of mass motion described by r, multiplied by the envelope function of the relative (hydrogen-like) motion of electron and hole around their common centre of gravity. By the terms “bound exciton complexes” or “bound excitons” [(BEC) and (BE), respectively], we understand excitons that are bound to some centres like neutral or ionized donors or neutral acceptors but also to more complex centres. They will be treated in Chap. 7. In contrast, by the term “localized excitons”, we mean electron–hole pairs, which are localized by disorder like intrinsic alloy disorder, for example, in Mg1−xZn x O and/or fluctuations of well (or wire) width in quantum structures. These phenomena are inherent to alloys and to structures of reduced dimensionality and are therefore included in this chapter. The influence of external fields on both free and bound excitons is then covered in Chap. 8.

Keywords

Valence Band Luminescence Spectrum Oscillator Strength Cavity Mode Exciton State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    C. Klingshirn, Semiconductor Optics, 3rd edn. (Springer, Berlin, 2007)Google Scholar
  2. 2.
    C. Klingshirn, phys. stat. sol. B 244, 3027 (2007)Google Scholar
  3. 3.
    C. Klingshirn, Chem. Phys. Chem. 8, 782 (2007)Google Scholar
  4. 4.
    S. Nudelman, S.S. Mitra eds., Optical Properties of Solids, NATO ASI series (Plenum Press, New York, 1969)Google Scholar
  5. 5.
    F. Wooten, Optical Properties of Solids (Academic, New York, 1972)Google Scholar
  6. 6.
    H. Haken, Quantenfeldtheorie des Festkörpers (Teubner, Stuttgart, 1973)Google Scholar
  7. 7.
    O. Madelung, Introduction to Solid State Theory, Springer Series in Solid State Sciences 2, (Springer, Berlin, 1981)Google Scholar
  8. 8.
    H. Haug, S.W. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors, 3rd edn. (World Scientific, Singapore, 1994)Google Scholar
  9. 9.
    P.Y. Yu, M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996)Google Scholar
  10. 10.
    F. Bassani, G.P. Paravicini, Electronic States and Optical Transitions (Pergamon Press, Oxford, 1975)Google Scholar
  11. 11.
    S. Nakajima, Y. Toyozawa, R. Abe, The Physics of Elementary Excitations, Springer Series in Solid State Sciences 12, (Springer, Berlin, 1980)Google Scholar
  12. 12.
    H. Haug, S. Schmitt-Rink, Prog. Quantum Electron 9, 3 (1984)Google Scholar
  13. 13.
    M. Ueta et al., Excitonic Processes in Solids, Springer Ser. Solid State Sci., vol. 60 (Springer, Berlin, 1986)Google Scholar
  14. 14.
    N. Peyghambarian, S.W. Koch, A. Mysyrowicz, Introduction to Semiconductor Optics (Prentice Hall, Englewood Cliffs, NJ 1993)Google Scholar
  15. 15.
    Y. Toyozawa, Optical Processes in Solids (Cambridge University Press, Cambridge 2003)Google Scholar
  16. 16.
    C. Klingshirn, H. Haug, Phys. Rep. 70, 315 (1981)Google Scholar
  17. 17.
    B. Hönerlage et al., Phys. Rep. 124, 161 (1985)Google Scholar
  18. 18.
    Ü. Özgür et al., J. Appl. Phys. 98, 041301 (2005)Google Scholar
  19. 19.
    J.J. Hopfield, D.G. Thomas, J. Phys. Chem. Solids 12, 276 (1960)Google Scholar
  20. 20.
    D.G. Thomas, J. Phys. Chem. Solids 15, 86 (1960)Google Scholar
  21. 21.
    J.J. Hopfield, J. Phys. Chem. Solids 15, 86 (1960)Google Scholar
  22. 22.
    D.G. Thomas, J.J. Hopfield, Phys. Rev. 132, 657 (1961)Google Scholar
  23. 23.
    D.G. Thomas, J.J. Hopfield, Phys. Rev. 132, 563 (1963)Google Scholar
  24. 24.
    R. Dietz, J.J. Hopfield, D.G. Thomas, J. Appl. Phys. 32(10) 2282 (1965)Google Scholar
  25. 25.
    J.J. Hopfield, D.G. Thomas, Phys. Rev. Lett. 15, 22 (1965)Google Scholar
  26. 26.
    R. Helbig, Freie und Gebundene Exzitonen in ZnO, Habilitation Thesis, Erlangen, 1975Google Scholar
  27. 27.
    K. Hümmer, Exzitonische Polaritonen in einachsigen Kristallen, Habilitation Thesis, Erlangen, 1978Google Scholar
  28. 28.
    U. Rößler, Phys. Rev. 184, 733 (1969)Google Scholar
  29. 29.
    A. Schleife et al. Appl. Phys. Lett. 91, 241915 (2007)Google Scholar
  30. 30.
    L.C. Lew Yan Voon et al. Phys. Rev. B 53 10703 (1996)Google Scholar
  31. 31.
    K. Hazu et al., J. Appl. Phys. 95, 5498 (2004)Google Scholar
  32. 32.
    K. Hümmer, R. Helbig, M. Baumgärtner, Phys. Stat. Sol. 86, 527 (1978)Google Scholar
  33. 33.
    R. Kuhnert, R. Helbig, K. Hümmer, Phys. Stat. Sol. 107, 83 (1981)Google Scholar
  34. 34.
    B. Gil, Phys. Rev. B 64, 201310 (2001)Google Scholar
  35. 35.
    J. Lagois, Phys. Rev. B 16, 1699 (1977)Google Scholar
  36. 36.
    J. Lagois, Phys. Rev. B 23, 5511 (1981)Google Scholar
  37. 37.
    R.L. Weiher, W.C. Tait, Phys. Rev. 166, 791 (1968)Google Scholar
  38. 38.
    R.L. Weiher, W.C. Tait, Phys. Rev. 185, 1114 (1969)Google Scholar
  39. 39.
    R.L. Weiher, W.C. Tait, Phys. Rev. B 5, 623 (1972)Google Scholar
  40. 40.
    A.A. Toropov et al. Phys. Rev. B 69, 165205 (2004)Google Scholar
  41. 41.
    K. Hümmer, P. Gebhardt, Phys. Stat. Sol. B 85, 271 (1978)Google Scholar
  42. 42.
    R. Kuhnert, R. Helbig, K. Hümmer, Phys. Stat. Sol. B 107, 83 (1981)Google Scholar
  43. 43.
    W.Y. Liang, A.D. Yoffe, Phys. Rev. Lett. 20, 59 (1968)Google Scholar
  44. 44.
    K. Hümmer, Phys. Stat. Sol. B, 56, 249 (1973)Google Scholar
  45. 45.
    U. Rössler et al. eds., Landolt-Börnstein, New Series, Group III, Vol. 17B, 22, 41B (Springer, Berlin, 1999)Google Scholar
  46. 46.
    T. Skettrup, Phys. Stat. Sol. 42, 813 (1970)Google Scholar
  47. 47.
    T. Skettrup, Phys. Stat. Sol. 109, 663 (1982)Google Scholar
  48. 48.
    D.C. Reynolds, C.W. Litton, T.C. Collins, Phys. Rev. A 140, 1726 (1965)Google Scholar
  49. 49.
    Y.S. Park et al., Phys. Rev. 143, 512 (1966)Google Scholar
  50. 50.
    B. Segall, Phys. Rev. 163, 769 (1967)Google Scholar
  51. 51.
    D.C. Reynolds et al., J. Appl. Phys. 86, 5598 (1999)Google Scholar
  52. 52.
    E. McGlynn et al., Physica B, 340–342, 230 (2003)Google Scholar
  53. 53.
    S.F. Chichibu et al., J. Appl. Phys. 93, 756 (2003)Google Scholar
  54. 54.
    A. Teke et al., Phys. Rev. B 70, 195207 (2004)Google Scholar
  55. 55.
    B. Gil et al., Jpn. J. Appl. Phys. 40, L 1089 (2001)Google Scholar
  56. 56.
    J. Lagois, Phys. Rev. B 23, 5511 (1981)Google Scholar
  57. 57.
    E. Mataguli, A.G. Thompson, M. Cardona, Phys. Rev. 176, 950 (1968)Google Scholar
  58. 58.
    A. Gavini, M. Cardona, Phys. Rev. 1, 672 (1970)Google Scholar
  59. 59.
    S.F. Chichibu et al., Semicond. Sci. Technol. 20, S67 (2005)Google Scholar
  60. 60.
    S. Tsoi et al., Phys. Rev. B 74, 165203 (2006)Google Scholar
  61. 61.
    S.I. Pekar, Sov. Phys. JETP, 9, 314 (1959)Google Scholar
  62. 62.
    S.I. Pekar, Sov. Phys. JETP 11, 1286 (1960)Google Scholar
  63. 63.
    S.I. Pekar, Phys. Stat. Sol. B 82, 83 (1977)Google Scholar
  64. 64.
    K. Bohnert, G. Schmieder, C. Klingshirn, Phys. Stat. Sol. B 98, 175 (1980)Google Scholar
  65. 65.
    C. Klingshirn et al., Phys. Rev. B 75, 115203 (2007)Google Scholar
  66. 66.
    E. Mollwo, Reichsber, Physik 1, 1 (1944)Google Scholar
  67. 67.
    H. Heiland, E. Mollwo, F. Stöckmann, Solid State Phys. 8, 191 (1959)Google Scholar
  68. 68.
    J.F. Muth et al., J. Appl. Phys. 85, 7884 (1999)Google Scholar
  69. 69.
    A. Yamamoto et al., Sol. State Commun. 122, 29 (2002)Google Scholar
  70. 70.
    D.C. Agarwal et al., J. Appl. Phys. 99, 123105 (2006)Google Scholar
  71. 71.
    G.S. Fu et al., Physica B 382, 17 (2006)Google Scholar
  72. 72.
    K. Ramamoorthy et al., Curr. Appl. Phys. 6, 103 (2006)Google Scholar
  73. 73.
    G. Blattner et al., Phys. Rev. B 25, 7413 (1982)Google Scholar
  74. 74.
    D.C. Reynolds et al., Phys. Rev. B 60, 2340 (1999)Google Scholar
  75. 75.
    D.C. Reynolds et al., Appl. Phys. Lett. 79, 3794 (2001)Google Scholar
  76. 76.
    C. Klingshirn et al., Superlattice. Microst. 38, 209 (2005)Google Scholar
  77. 77.
    C. Klingshirn, Phys. Stat. Sol. B 71, 547 (1975)Google Scholar
  78. 78.
    R. Hauschild et al., Phys. Stat. Sol. C 3(4), 980 (2006)Google Scholar
  79. 79.
    X.T. Zhang et al., J. Lumin. 99, 149 (2002)Google Scholar
  80. 80.
    W. Shan et al., Appl. Phys. Lett. 86, 191911 (2005)Google Scholar
  81. 81.
    G. Hvedstrup Jensen, T. Skettrup, Phys. Stat. Sol. B 60, 169 (1973)Google Scholar
  82. 82.
    G. Hvedstrup Jensen, Phys. Stat. Sol. B 64, K51 (1974)Google Scholar
  83. 83.
    D.W. Hamby et al., J. Appl. Phys. 93, 3214 (2003)Google Scholar
  84. 84.
    F.J. Manjón et al., Sol. State Commun. 128, 35 (2003)Google Scholar
  85. 85.
    J. Serrano et al., Phys. Rev. Lett. 90, 55510 (2003)Google Scholar
  86. 86.
    J. Serrano et al., Phys. Rev. B 69, 094306 (2004)Google Scholar
  87. 87.
    L. Wang, N.C. Giles, J. Appl. Phys. 94, 973 (2003)Google Scholar
  88. 88.
    Y.P. Varshni, Physica 34, 149 (1967)Google Scholar
  89. 89.
    R. Pässler, J. Appl. Phys. 89, 6235 (2001)Google Scholar
  90. 90.
    T. Makino et al., Appl. Phys. Lett. 76, 3549 (2000)Google Scholar
  91. 91.
    S. Adachi et al., Semicond. Sci.Technol. 19, S276 (2004)Google Scholar
  92. 92.
    K. Hazu et al., J. Appl. Phys 96, 1270 (2004)Google Scholar
  93. 93.
    E. Mollwo, Z. Angew. Physik 6, 257 (1954)Google Scholar
  94. 94.
    B. Andress, Z. Phys. 170, 1 (1962)Google Scholar
  95. 95.
    W.L. Bond, J. Appl. Phys. 36, 1674 (1965)Google Scholar
  96. 96.
    Y.S. Park, J.R. Schneider, J. Appl. Phys. 39, 3049 (1968)Google Scholar
  97. 97.
    R. Schmidt et al., Appl. Phys. Lett. 82, 2262 (2003)Google Scholar
  98. 98.
    M. Hauser et al., Appl. Phys. Letters, 92, 211105 (2008)Google Scholar
  99. 99.
    J. Fallert et al., Opt. Express 16, 1125 (2008)Google Scholar
  100. 100.
    G. Heiland, P. Kunstmann, H. Pfister, Z. Phys. 176, 485 (1963)Google Scholar
  101. 101.
    A. Klein, Z. Phys. 188, 352 (1965)Google Scholar
  102. 102.
    G. Heiland, P. Kunstmann, Surf. Sci. 13, 72 (1969)Google Scholar
  103. 103.
    Y. Ding, Z.L. Wang, Surf. Sci. 601, 425 (2007)Google Scholar
  104. 104.
    M.W. Allen et al., Appl. Phys. Lett. 91, 053512 (2007)Google Scholar
  105. 105.
    T.P. Bartelt et al., Proc. SPIE 6895, 689502 (2008)Google Scholar
  106. 106.
    H. Kalt, in Landolt-Börnstein, Group III Vol. 34C Part 2 C. Klingshirn ed. (Springer, Heidelberg, 2004)Google Scholar
  107. 107.
    W.I. Park, et al., Appl. Phys. Lett. 82, 964 (2003)Google Scholar
  108. 108.
    B.P. Zhang et al., Appl. Phys. Lett. 83, 1635 (2003)Google Scholar
  109. 109.
    Q.X. Zhao et al., Appl. Phys. Lett. 83, 165 (2003)Google Scholar
  110. 110.
    I. Shalish, H. Temkin, V. Narayanamurti, Phys. Rev. B 69, 245401 (2004)Google Scholar
  111. 111.
    M. Watanabe et al., Appl. Phys. Lett. 86, 221907 (2005)Google Scholar
  112. 112.
    L. Wischmeier et al., Appl. Phys. A 84,111 (2004)Google Scholar
  113. 113.
    L. Wischmeier et al., Phys. Stat. Sol. B 243, 919 (2006)Google Scholar
  114. 114.
    H. Priller et al., J. Lumin. 112, 173 (2005)Google Scholar
  115. 115.
    R. Hauschild et al., Phys. Stat. Sol. B 243, 853 (2006)Google Scholar
  116. 116.
    Y. Liang et al., Physica E 33, 191 (2006)Google Scholar
  117. 117.
    J.W. Hsu et al., Appl. Phys. Lett. 88, 252103 (2006)Google Scholar
  118. 118.
    D. Wang et al., J. Appl. Phys. 99, 113509 (2006)Google Scholar
  119. 119.
    M. Schirra et al., J. Appl. Phys. 101, 113509 (2007)Google Scholar
  120. 120.
    H.P. He et al., J. Appl. Phys. 102, 013511 (2007)Google Scholar
  121. 121.
    H.P. He et al., Appl. Phys. Lett. 90, 023104 (2007)Google Scholar
  122. 122.
    H. Zhou et al., Appl. Phys. Lett. 92, 132112 (2008)Google Scholar
  123. 123.
    E. McGlynn et al., Thin Solid Films 458, 330 (2004)Google Scholar
  124. 124.
    E. McGlynn et al., Nanotechnology 16, 2625 (2005)Google Scholar
  125. 125.
    S.F. Chichibu et al., J. Appl. Phys. 99, 093505 (2006)Google Scholar
  126. 126.
    A. Tsukazaki et al., Appl. Phys. Lett., 84, 3858 (2004)Google Scholar
  127. 127.
    H. Zhou et al., Appl. Phys. Lett., 91, 181112 (2007)Google Scholar
  128. 128.
    G. Xiong et al., J.Phys. Condens. Matter 17, 7287 (2005)Google Scholar
  129. 129.
    C.J. Vesely, R.L. Hengehold, D. Langer, Phys. Rev. B 5, 2296 (1972)Google Scholar
  130. 130.
    L. Ley et al., Phys. Rev. B 9, 600 (1974)Google Scholar
  131. 131.
    J.L. Freeouf, Phys. Rev. B 7, 3810 (1973)Google Scholar
  132. 132.
    W. Ranke, Solid State Commun. 19, 685 (1976)Google Scholar
  133. 133.
    G. Zwicker, K. Jacobi, Solid State Commun. 54, 701 (1985)Google Scholar
  134. 134.
    K. Ozawa et al., Phys. Rev. B 68, 125417 (2003)Google Scholar
  135. 135.
    R. Schmidt-Grund et al., J. Korean Phys. Soc., 53, 88 (2008)Google Scholar
  136. 136.
    H. Zhou et al., Phys. Stat. Sol. A 204, 112 (2007)Google Scholar
  137. 137.
    M. Schumm et al., J. Phys. Conference Series 92 (2007) 012149Google Scholar
  138. 138.
    M. Schumm et al., New J. Phys. 10, 043004 (2008)Google Scholar
  139. 139.
    Sample by courtesy of Y.R. Ryu (MOXtronics, Columbia), see M.S. Han et al. J. Crystal Growth 303, 506 (2007), measurement by J. Fallert (University of Karlsruhe), private communication (2007)Google Scholar
  140. 140.
    M. Lorenz et al., Solid State Electron. 47, 2205 (2003)Google Scholar
  141. 141.
    T. Makino et al., Appl. Phys. Lett. 78, 1237 (2001)Google Scholar
  142. 142.
    F.K. Shan et al., J. Cryst. Growth 291, 328 (2006)Google Scholar
  143. 143.
    R. Schmidt-Grund et al., J. Appl. Phys. 99, 123701 (2006)Google Scholar
  144. 144.
    D.M. Roessler, W.C. Walker, Phys. Rev. 159, 733 (1967)Google Scholar
  145. 145.
    R. Schmidt et al., Appl. Phys. Lett. 82, 2260 (2003)Google Scholar
  146. 146.
    S. Shigemori et al., Jpn. J. Appl. Phys. 43, L1088 (2004)Google Scholar
  147. 147.
    L.M. Kukreja, S. Barik, P. Misra, J. Cryst. Growth 268, 531 (2004)Google Scholar
  148. 148.
    S. Sadofev et al., Appl. Phys. Lett. 89, 201907 (2006)Google Scholar
  149. 149.
    S. Sadofev et al., Appl. Phys. Lett. 91, 201923 (2007)Google Scholar
  150. 150.
    A. Sarkar et al., Thin Solid Films 204, 255 (1991)Google Scholar
  151. 151.
    S. Monticone, R. Tufeu, A.V. Kanaev, J. Phys. Chem. B 102, 2854 (1998)Google Scholar
  152. 152.
    I. Takeuchi, J. Appl. Phys. 94, 7336 (2003)Google Scholar
  153. 153.
    T. Takagi et al., Jpn. J. Appl. Phys. 42, L401 (2003)Google Scholar
  154. 154.
    J. Chen et al., J. Phys.:Condens. Matter. 15, L475 (2003)Google Scholar
  155. 155.
    D.S. Chemla et al., IEEE J. Quantum Electron. 24, 1664 (1988)Google Scholar
  156. 156.
    I. Bar- Joseph, Phys. Rev. Lett. 59, 1357 (1987)Google Scholar
  157. 157.
    V.M. Agranovich, A.A. Maradudin, eds., Modern Problems in Condensed Matter Sciences (North Holland, Amsterdam)Google Scholar
  158. 158.
    V.M. Agranovich, D.L. Mills eds., Surface Polaritons, Vol. 1 of [157] (1982)Google Scholar
  159. 159.
    V.M. Agranovich, R. Landon, eds., Surface Excitations, Vol. 9 of [157] (1984)Google Scholar
  160. 160.
    J. Lagois, B. Fischer, Adv. Solid State Phys. 18, 197 (1978)Google Scholar
  161. 161.
    J. Lagois, B. Fischer, Solid State Commun. 18, 1519 (1976)Google Scholar
  162. 162.
    J. Lagois, B. Fischer, Phys. Rev. Lett. 36, 680 (1976)Google Scholar
  163. 163.
    F. DeMartini et al., Phys. Rev. Lett., 38, 1223 (1977)Google Scholar
  164. 164.
    M. Fukui, V.C-Y. So, G.I. Stegeman, Phys. Rev. Solid State Commun. 30, 683; (1979)Google Scholar
  165. 165.
    M. Fukui, V.C-Y. So, G.I. Stegeman, Phys. Rev. B 22, 1010 (1980)Google Scholar
  166. 166.
    I. Hirabayashi, Y. Tokura, T. Koda, J. Phys. Soc. Jpn. 51, 2934 (1982)Google Scholar
  167. 167.
    M. Fukui, A. Kamada, O. Tada, J. Phys. Soc. Japan 53, 1185 (1984)Google Scholar
  168. 168.
    J. Cui et al., Appl. Phys. Lett. 89, 051108 (2006)Google Scholar
  169. 169.
    A.V. Thompson et al., Appl. Phys. Lett. 91, 201921 (2007)Google Scholar
  170. 170.
    I.A. Buyanova et al., Appl. Phys. Lett. 92, 261912 (2008)Google Scholar
  171. 171.
    T. Makino et al., Appl. Phys. Lett. 77, 975 (2000)Google Scholar
  172. 172.
    T. Makino et al., Semicond. Sci.Technol. 20, S78 (2005)Google Scholar
  173. 173.
    X.Q. Gu et al., Appl. Phys. Lett. 91, 022103 (2007)Google Scholar
  174. 174.
    H.D. Sun et al., J. Appl. Phys. 91, 1993 (2002)Google Scholar
  175. 175.
    S. Kalusniak et al., Phys. Rev. B 77, 113312 (2008)Google Scholar
  176. 176.
    K. Koike et al., Jpn. J Appl. Phys. 43, L1372 (2004)Google Scholar
  177. 177.
    C. Morhain et al., Phys. Rev. B 72, 241305 (2005)Google Scholar
  178. 178.
    T. Makino et al., Appl. Phys. Lett. 93, 121907 (2008)Google Scholar
  179. 179.
    A. Ohtomo et al., Appl. Phys. Lett. 75, 980 (1999)Google Scholar
  180. 180.
    G. Coli, K.K. Bajaj, Appl. Phys. Lett. 78, 2861 (2001)Google Scholar
  181. 181.
    T. Makino et al., Appl. Phys. Lett. 78, 1979 (2001)Google Scholar
  182. 182.
    H.D. Sun et al., Appl. Phys. Lett. 78, 2464 (2001)Google Scholar
  183. 183.
    W.I. Park et al., Adv. Mat. 15, 526 (2003)Google Scholar
  184. 184.
    Xu Tian-Ning et al. Chin. Phys. Lett. 20, 1829 (2003)Google Scholar
  185. 185.
    Th. Gruber et al., Appl. Phys. Lett. 84, 5359 (2004)Google Scholar
  186. 186.
    B. Bhattacharya, R.R. Das, R.S. Katiyar, Thin Solid Films, 447–448, 564 (2004)Google Scholar
  187. 187.
    B.P. Zhang et al., Appl. Phys. Lett. 86, 032105 (2005)Google Scholar
  188. 188.
    Y.M. Lu et al., J. Cryst. Growth, 278, 299 (2005)Google Scholar
  189. 189.
    C. Morhain et al., Superlattice. Microstructure 38, 455 (2005)Google Scholar
  190. 190.
    T. Makino et al., J. Appl. Phys. 99, 066108 (2006)Google Scholar
  191. 191.
    P. Misra et al., Appl. Phys. Lett. 89, 161912 (2006)Google Scholar
  192. 192.
    P. Misra, T.K. Sharma, L.M. Kukreja Superlattice. Microstructure. 42, 212 (2007)Google Scholar
  193. 193.
    H. Shibata et al., Appl. Phys. Lett. 90, 124104 (2007)Google Scholar
  194. 194.
    M. Al-Suleiman et al., Appl. Phys. Lett. 91, 081911 (2007)Google Scholar
  195. 195.
    S. Heitsch et al., J. Appl. Phys. 101, 083521 (2007)Google Scholar
  196. 196.
    S. Heitsch et al., Appl. Phys. A 88, 99 (2007)Google Scholar
  197. 197.
    R. Hauschild et al., Phys. Stat. Sol. B 243, 853 (2006)Google Scholar
  198. 198.
    R. Hauschild et al., Phys. Stat. Sol. C 3, 3557 (2006)Google Scholar
  199. 199.
    R. Hauschild, H. Kalt, Appl. Phys. Lett. 89, 123107 (2006)Google Scholar
  200. 200.
    T. Voss et al., Nano Lett. 7, 3675 (2007)Google Scholar
  201. 201.
    D. Stichtenoth et al., Nanotechnology 18, 435701 (2007)Google Scholar
  202. 202.
    T. Nobis et al., Phys. Rev. Lett. 93, 103903–3 (2004)Google Scholar
  203. 203.
    L. Sun et al., Phys. Rev. Lett. 100, 156403 (2008)Google Scholar
  204. 204.
    Y. Gu et al., Appl. Phys. Lett. 85, 3833 (2004)Google Scholar
  205. 205.
    C-W. Chen et al., Appl. Phys. Lett. 88, 241905 (2006)Google Scholar
  206. 206.
    J-P. Richters et al., Appl. Phys. Lett. 92, 011103 (2008)Google Scholar
  207. 207.
    E-S. Jang et al., Appl. Phys. Lett. 88, 023102 (2006)Google Scholar
  208. 208.
    Won Il Park et al., Adv. Mater. 15, 526 (2003)Google Scholar
  209. 209.
    T. Yatsui et al., Appl. Phys. Lett. 85, 727 (2004)Google Scholar
  210. 210.
    A. Bakin et al., Phys. Stat. Sol. C 4, 158 (2007)Google Scholar
  211. 211.
    C. Czekalla et al., Nanotechnology 19, 115202 (2008)Google Scholar
  212. 212.
    L. Spanhel, J. Sol-Gel Technol. 39, 7 (2006)Google Scholar
  213. 213.
    J. Fallert, J. Appl. Phys. 101, 073506 (2007)Google Scholar
  214. 214.
    M. Schirra et al., Physica B 401–402, 362 (2007)Google Scholar
  215. 215.
    M. Schirra et al., Phys. Rev. B 77, 125215 (2008)Google Scholar
  216. 216.
    J.G. Lu, Appl. Phys. Lett. 89, 023122 (2006)Google Scholar
  217. 217.
    D.W. Bahnemann, C. Kormann, M.R. Hoffmann, J. Phys. Chem. 91, 3789 (1987)Google Scholar
  218. 218.
    Y. Kayanuma, Phys. Rev. B 38, 9797 (1988)Google Scholar
  219. 219.
    C.M. Mo et al., J. Appl. Phys. 83, 4389 (1998)Google Scholar
  220. 220.
    C.L. Yang et al., J. Appl. Phys. 90, 4489 (2001)Google Scholar
  221. 221.
    A. van Dijken et al., J. Lumin. 87–89, 454 (2000)Google Scholar
  222. 222.
    T. Yatsui et al., Appl. Phys. Lett. 80, 1444 (2002)Google Scholar
  223. 223.
    A. Wood et al., Aust. J. Chem. 56, 1051 (2003)Google Scholar
  224. 224.
    S.D. Kshirsagar, V.V. Nikesh, S. Mahamuni, Appl. Phys. Lett. 89, 053120 (2006)Google Scholar
  225. 225.
    Y. Yang et al., J. Phys. Condens. Matter, 16, 7277 (2004)Google Scholar
  226. 226.
    Y. Yang et al., J. Phys. Chem. B, 110, 846 (2006)Google Scholar
  227. 227.
    V.A. Fonoberov, A.A. Balandin, Appl. Phys. Lett. 85, 5971 (2004)Google Scholar
  228. 228.
    Y.J. Zheng et al., Appl. Phys. Lett. 90, 012111 (2007)Google Scholar
  229. 229.
    M. Zamfirescu et al., Phys. Rev. 65, 161205 (2002)Google Scholar
  230. 230.
    R. Schmidt-Grund et al., Appl. Phys. B 93, 331 (2008)Google Scholar
  231. 231.
    L.K. van Vugt et al., Phys. Rev. Lett. 97, 147401 (2006)Google Scholar
  232. 232.
    R. Shimada et al., SPIE Proc. 6895, 689501–1 (2008)Google Scholar
  233. 233.
    R. Shimada et al. Appl. Phys. Lett. 92, 011127 (2008)Google Scholar
  234. 234.
    F. Reveret et al., Opt. Mater. 31, 505 (2009)Google Scholar
  235. 235.
    F. Medard et al., Phys. Rev. B 79, 125302 (2009)Google Scholar
  236. 236.
    Ch. Sturm et al., New J. Phys. 11, 073044 (2009)Google Scholar
  237. 237.
    Zanghai Chen et al., 14th Intern. Conf. on II-VI Compounds, St Petersburg Sept. (2009), Fr 2–1 to be published in phys. stat. sol. CGoogle Scholar
  238. 238.
    A. Trichet et al., ibid. Fr 2–3Google Scholar
  239. 239.
    A.N. Gruzintsev et al., ibid. Fr 2–4Google Scholar
  240. 240.
    C. Klingshirn et al., in 14th Intern. Conf. on II-VI Compounds, St Petersburg Sept. (2009), Su 1–1, to be published in phys. stat. sol. CGoogle Scholar
  241. 241.
    T. Thomay et al., Opt. Exp. 16, 9791 (2008)Google Scholar
  242. 242.
    M. Lorenz et al., Phys. Stat. Sol. B 247, 1265 (2010)Google Scholar
  243. 243.
    C.P. Dietrich et al., New J. of Phys. 12, 033030 (2010)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  1. 1.Institut für Angewandte PhysikKarlsruher Institut für Technologie KITKarlsruheGermany

Personalised recommendations