Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy

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Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 133)

Abstract

Positron annihilation spectroscopy is an experimental technique that allows for the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. This chapter first gives a short introduction to positron annihilation techniques, and then proceeds to present an overview of the positron studies of vacancy defects and impurities in bulk and quasi-bulk GaN. Both the in-grown and processing induced defects are addressed.

Keywords

Positron Annihilation Positron Lifetime Vacancy Defect Hydride Vapor Phase Epitaxy Positron Annihilation Spectroscopy 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  1. 1.Department of Applied PhysicsHelsinki University of TechnologyTKK EspooFinland

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