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Development of the Bulk GaN Substrate Market

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Technology of Gallium Nitride Crystal Growth

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 133))

Abstract

Near- and long-term market applications for bulk GaN substrates are examined, along with motivations and challenges for adopting the substrate technology for specific device applications. The near-term demand for bulk GaN is driven primarily by laser diodes, while solid state lighting and power electronics will drive the long-term demand. Challenges to achieving broad market penetration include increased volume production and reduced manufacturing cost, which are needed to penetrate incumbent GaN device technologies based on foreign substrates.

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Authors and Affiliations

  1. SRI International, 7935 114th Avenue N, Largo, FL, 33773, USA

    Andrew D. Hanser

  2. Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC, 27617-4606, USA

    Keith R. Evans

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  1. Andrew D. Hanser
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  2. Keith R. Evans
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Correspondence to Andrew D. Hanser .

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Editors and Affiliations

  1. Inst. Materials Research (IMR), Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan

    Dirk Ehrentraut

  2. Integrierte Systeme und, Bauelementetechnologie (IISB), Fraunhofer Institut für, Schottkystr. 10, Erlangen, 91058, Germany

    Elke Meissner

  3. Inst. High-Pressure Physics, PAN Warszawa, Sokolowska 29/37, Warszawa, 01-687, Poland

    Michal Bockowski

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Hanser, A.D., Evans, K.R. (2010). Development of the Bulk GaN Substrate Market. In: Ehrentraut, D., Meissner, E., Bockowski, M. (eds) Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-04830-2_1

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  • DOI: https://doi.org/10.1007/978-3-642-04830-2_1

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