Intrinsic Non-Exponential Decay of Time-Resolved Photoluminescence from Semiconductor Quantum Dots

  • Jan Wiersig
  • Christopher Gies
  • Norman Baer
  • Frank Jahnke
Part of the Advances in Solid State Physics book series (ASSP, volume 48)


A general introduction is presented to the recently observed intrinsic non-exponential and excitation intensity-dependent decay of time-resolved photoluminescence from semiconductor quantum dots. The commonly used two-level approximation fails in this situation since it relies on fully correlated carriers. In a semiconductor, however, the correlations are subject to scattering and dephasing processes. Hence, carriers are in general not fully correlated. It is shown that this effect leads to a non-exponential and excitation intensity-dependent decay of photoluminescence. The origin of the phenomenon is discussed in detail for a simplified situation. The full problem is studied numerically on the basis of a microscopic theory that includes Coulomb and carrier-photon correlation effects.


Excitation Intensity Microscopic Theory Wetting Layer Singlet Level Cluster Expansion Method 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  • Jan Wiersig
    • 1
  • Christopher Gies
    • 1
  • Norman Baer
    • 1
  • Frank Jahnke
    • 1
  1. 1.Institute for Theoretical PhysicsUniversity of BremenGermany

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