Defect-Selective Etching of Semiconductors

Chapter

Abstract

In the present chapter we first briefly consider mechanisms for the etching of semiconductors (Sect. 43.1) and relate these principles to methods for controlling surface morphology and revealing defects (Sect. 43.2). Section 43.3 describes in some detail defect-sensitive etching methods. Results are presented for the classical (orthodox) method used for revealing dislocations in Sect. 43.3.1. More recently developed open-circuit (photo)etching approaches, sensitive to both crystallographic and electrically active inhomogeneities in semiconductors, are reviewed in Sect. 43.3.2. In particular, attention will focus on newly introduced etchants and etching procedures for wide-bandgap semiconductors.

Keywords

Etch Rate Electrochemical Etching Multiple Quantum Well Liquid Encapsulate Czochralski Inversion Domain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Abbreviations

3-D

three-dimensional

AB

Abrahams and Burocchi

AFM

atomic force microscopy

BPD

basal-plane dislocation

CE

counterelectrode

CL

cathode-ray luminescence

CL

cathodoluminescence

DIC

differential interference contrast

DS

directional solidification

DSE

defect-selective etching

DSL

diluted Sirtl with light

EBIC

electron-beam-induced current

EPD

etch pit density

FIB

focused ion beam

HF

hydrofluoric acid

HH

heavy-hole

HSXPD

hemispherically scanned x-ray photoelectron diffraction

HVPE

halide vapor-phase epitaxy

HVPE

hydride vapor-phase epitaxy

ID

inner diameter

ID

inversion domain

IF

identification flat

LEC

liquid encapsulation Czochralski

LST

laser scattering tomography

LST

local shaping technique

MOCVD

metalorganic chemical vapor deposition

MOCVD

molecular chemical vapor deposition

MQW

multiple quantum well

OF

orientation flat

RE

rare earth

RE

reference electrode

SD

screw dislocation

SEM

scanning electron microscope

SEM

scanning electron microscopy

SF

stacking fault

SI

semi-insulating

TED

threading edge dislocation

TEM

transmission electron microscopy

UV

ultraviolet

VB

valence band

VB

vertical Bridgman

WE

working electrode

This is a preview of subscription content, log in to check access.

References

  1. 43.1.
    H.C. Gatos, M.C. Lavine: Characteristics of the {111} surfaces of the III-V intermetallic compounds, J. Electrochem. Soc. 107, 427–433 (1960)CrossRefGoogle Scholar
  2. 43.2.
    S. Amelinckx: Direct Observation of Dislocations, Supplement to Solid State Physics, Vol. 6 (Academic, New York 1964) pp. 15–50MATHGoogle Scholar
  3. 43.3.
    D.J. Stirland, B.W. Straughan: A review of etching and defect characterization of gallium arsenide substrate material, Thin Solid Films 31, 139–170 (1976)ADSCrossRefGoogle Scholar
  4. 43.4.
    D.C. Miller, G.A. Rozgonyi: Defect characterization by etching, optical microscopy and x-ray topography. In: Handbook on Semiconductors, Vol. 3, ed. by S.B. Keller (North-Holland, Amsterdam 1980) pp. 218–246Google Scholar
  5. 43.5.
    R.B. Heimann: Principles of chemical etching – the art and science of etching crystals. In: Crystals: Growth, Properties and Applications, Vol. 8, ed. by J. Grabmaier (Springer, Berlin, Heidelberg 1982) pp. 173–224Google Scholar
  6. 43.6.
    K. Sangwal: Etching of Crystals (North-Holland, Amsterdam 1987)Google Scholar
  7. 43.7.
    P.H.L. Notten, J.E.A.M. van den Meerakker, J.J. Kelly: Etching of III–V Semiconductors: an Electrochemical Approach (Elsevier, Oxford 1991)Google Scholar
  8. 43.8.
    J.L. Weyher: Characterization of compound semiconductors by etching. In: Handbook on Semiconductors, Vol. 3, ed. by S. Mahajan (Elsevier, Amsterdam 1994) pp. 995–1031Google Scholar
  9. 43.9.
    J.L. Weyher: Characterization of bulk as-grown and annealed III-Vs by photo-etching and complementary methods, Inst. Phys. Conf. Ser. 146, 399–408 (1995)Google Scholar
  10. 43.10.
    J.L. Weyher, C. Frigeri, S. Müller: Selective etching and complementary microprobe techniques (SFM, EBIC). In: Microprobe Characterization of Optoelectronic Materials, Vol. 17, ed. by J. Jimenez (Taylor & Francis, New York 2003) pp. 595–689, Chap. 8Google Scholar
  11. 43.11.
    D. Zhuang, J.H. Edgar: Wet etching of GaN, AlN and SiC: a review, Mater. Sci. Eng. R 48, 1–46 (2005)CrossRefGoogle Scholar
  12. 43.12.
    J.L. Weyher: Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods, Superlattices Microstruct. 40, 279–288 (2006)ADSCrossRefGoogle Scholar
  13. 43.13.
    J.J. Kelly, D. Vanmaekelbergh: Chemical and electrochemical etching of semiconductors. In: Semiconductor Micromachining, Fundamental Electrochemistry and Physics, Vol. 1, ed. by S.A. Campbell, H.J. Lewerenz (Wiley, Chichester 1997), Chap. 2Google Scholar
  14. 43.14.
    P.H.L. Notten: The etching of InP in HCl solutions: a chemical mechanism, J. Electrochem. Soc. 131, 2641–2644 (1984)CrossRefGoogle Scholar
  15. 43.15.
    J.J. Kelly, H.G.G. Philipsen: Anisotropy in the wet-etching of semiconductors, Curr. Opin. Solid State Mater. Sci. 9, 84–90 (2005)ADSCrossRefGoogle Scholar
  16. 43.16.
    R.A. Wind, M.A. Hines: Macroscopic etch anisotropies and microscopic reaction mechanisms: using microfabrication to unravel the complicated chemistry of KOH/Si etching, J. Phys. Chem. B 106, 1557–1569 (2002)CrossRefGoogle Scholar
  17. 43.17.
    I.M. Huygens, K. Strubbe, W.P. Gomes: Electrochemistry and photoetching of n-GaN, J. Electrochem. Soc. 147, 1797–1802 (2000)CrossRefGoogle Scholar
  18. 43.18.
    A.R. de Wit, M.D. Janssen, J.J. Kelly: Electrochemical characterization of polycrystalline ZnO layers, Appl. Surf. Sci. 45, 21–27 (1990)ADSCrossRefGoogle Scholar
  19. 43.19.
    A. Gagnaire, J. Joseph, A. Etcheberry, J. Gautron: An ellipsometric study of the electrochemical surface modifications of n-InP, J. Electrochem. Soc. 132, 1655–1658 (1985)CrossRefGoogle Scholar
  20. 43.20.
    P.H.L. Notten, J.J. Kelly: Evidence for cathodic protection of crystallographic facets from GaAs etching profiles, J. Electrochem. Soc. 134, 444–448 (1987)CrossRefGoogle Scholar
  21. 43.21.
    J.J. Kelly, J.E.A.M. van den Meerakker, P.H.L. Notten: Electrochemistry of photoetching and defect-revealing in III-V materials, Dechema-Monogr. 102, 453–464 (1986)Google Scholar
  22. 43.22.
    J. van de Ven, H.J.P. Nabben: Anisotropic photoetching of III-V semiconductors I. Electrochemistry, J. Electrochem. Soc. 137, 1603–1610 (1990)CrossRefGoogle Scholar
  23. 43.23.
    J. van de Ven, H.J.P. Nabben: Anisotropic photoetching of III-V semiconductors II. Kinetics and structural factors, J. Electrochem. Soc. 138, 144–152 (1991)CrossRefGoogle Scholar
  24. 43.24.
    C. Youtsey, I. Adesida, G. Bulman: Highly anisotropic photoenhanced wet etching of n-type GaN, Appl. Phys. Lett. 71, 2151–2153 (1997)ADSCrossRefGoogle Scholar
  25. 43.25.
    L. Macht, J.J. Kelly, J.L. Weyher, A. Grzegorczyk, P.K. Larsen: An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology, J. Cryst. Growth 273, 347–356 (2005)ADSCrossRefGoogle Scholar
  26. 43.26.
    J.L. Weyher, R. Fornari, T. Görög, J.J. Kelly, B. Erné: HBr-K2Cr2O7-H2O etching system for indium phosphide, J. Cryst. Growth 141, 57–67 (1994)ADSCrossRefGoogle Scholar
  27. 43.27.
    V. Lehmann: Electrochemistry of Silicon. Instrumentation, Science, Materials and Applications (Wiley-VCH, Weinheim 2002)Google Scholar
  28. 43.28.
    M.M. Faktor, J.L. Stevenson: The detection of structural defects in GaAs by electrochemical etching, J. Electrochem. Soc. 125, 621–629 (1978)CrossRefGoogle Scholar
  29. 43.29.
    C.R. Elliott, J.C. Regnault: The detection of strucutural defects in indium phosphide by electrochemical etching, J. Electrochem. Soc. 128, 113–116 (1981)CrossRefGoogle Scholar
  30. 43.30.
    A. Yamamoto, S. Tohno, C. Uemura: Detection of structural defects in n-type InP crystals by electrochemical etching under illumination, J. Electrochem. Soc. 128, 1095–1100 (1981)CrossRefGoogle Scholar
  31. 43.31.
    R. Bhat: Photoelectrochemical defect delineation in GaAs using hydrochloric acid, J. Electrochem. Soc. 132, 2284–2285 (1985)CrossRefGoogle Scholar
  32. 43.32.
    L. Blok: Characterization of vapour grown (001) GaAs1-xPx layers by selective photo-etching, J. Cryst. Growth 31, 250–255 (1975)ADSCrossRefGoogle Scholar
  33. 43.33.
    E. Sirtl, A. Adler: Cromasäure-Flußsäure als spezifisches System zur Ätzgrubenentwicklung auf Silizium, Z. Metallkd. 52, 529–531 (1961), in GermanGoogle Scholar
  34. 43.34.
    J. Weyher, J. van de Ven: Selective etching and photoetching of {100} Gallium Arsenide in CrO3-HF aqueous solutions. Part I: Influence of composition on etching behaviour, J. Cryst. Growth 63, 285–291 (1983)ADSCrossRefGoogle Scholar
  35. 43.35.
    J. van de Ven, J.E.A.M. van den Meerakker, J.J. Kelly: The mechanism of GaAs etching in CrO3-HF solutions I. Experimental results, J. Electrochem. Soc. 132, 3020–3026 (1985)CrossRefGoogle Scholar
  36. 43.36.
    J.J. Kelly, J. van de Ven, J.E.A.M. van den Meerakker: The mechanism of GaAs etching in CrO3-HF solutions II. Model and discussion, J. Electrochem. Soc. 132, 3026–3033 (1985)CrossRefGoogle Scholar
  37. 43.37.
    J. van de Ven, J.L. Weyher, J.E.A.M. van den Meerakker, J.J. Kelly: Kinetics and morphology of GaAs etching in aqueous CrO3-HF solutions, J. Electrochem. Soc. 133, 799–806 (1986)CrossRefGoogle Scholar
  38. 43.38.
    J.E.A.M. van den Meerakker, J.H.C. van Vegchel: Silicon etching in CrO3-HF solutions. I: High [HF]/[CrO3] ratios, J. Electrochem. Soc. 136, 1949–1953 (1989)CrossRefGoogle Scholar
  39. 43.39.
    J.E.A.M. van den Meerakker, J.H.C. van Vegchel: Silicon etching in CrO3-HF solutions. II: low [HF]/CrO3] ratios, J. Electrochem. Soc. 136, 1954–1957 (1989)CrossRefGoogle Scholar
  40. 43.40.
    P. Visconti, D. Huang, M.A. Reshchikov, F. Yun, R. Cingolani, D.J. Smith, J. Jasinski, W. Swider, Z. Liliental-Weber, H. Markoç: Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques, Mater. Sci. Eng. B 93, 229–233 (2002)CrossRefGoogle Scholar
  41. 43.41.
    J. Chen, J.F. Wang, H. Wang, J.J. Zhu, S.M. Zgang, D.G. Zhao, D.S. Jiang, H. Yang, K.H. Ploog: Measurement of threading dislocation densities in GaN by wet chemical etching, Semicond. Sci. Technol. 21, 1229–1235 (2006)ADSCrossRefGoogle Scholar
  42. 43.42.
    J. Angilello, R.M. Potemski, G.R. Woolhouse: Etch pits and dislocations in {100} GaAs, J. Appl. Phys. 46, 2315–2316 (1975)ADSCrossRefGoogle Scholar
  43. 43.43.
    K. Akita, T. Kusunoki, S. Komiya, T. Kotani: Observation of etch pits produced in InP by new etchants, J. Cryst. Growth 46, 783–787 (1979)ADSCrossRefGoogle Scholar
  44. 43.44.
    S.N.G. Chu, C.M. Jodluk, A.A. Ballman: New dislocation etchant for InP, J. Electrochem. Soc. 129, 352–354 (1982)CrossRefGoogle Scholar
  45. 43.45.
    S. Komiya, T. Kotani: Direct observation of dislocations in GaAlAs-GaAs grown by the LPE method, J. Electrochem. Soc. 125, 2019–2024 (1978)CrossRefGoogle Scholar
  46. 43.46.
    E.S. Hellman: The polarity of GaN: a critical review, MRS Internet J. Nitride Semicond. Res. 3, 1–11 (1998)Google Scholar
  47. 43.47.
    M. Seelmann-Eggebert, J.L. Weyher, H. Obloh, H. Zimmermann, A. Rar, S. Porowski: Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire, Appl. Phys. Lett. 71, 2635–2637 (1997)ADSCrossRefGoogle Scholar
  48. 43.48.
    J.L. Rouvière, J.L. Weyher, M. Seelmann-Eggebert, S. Porowski: Polarity determination for GaN films grown on (0001) sapphire and high-pressure grown GaN single crystals, Appl. Phys. Lett. 73, 668–670 (1998)ADSCrossRefGoogle Scholar
  49. 43.49.
    D. Li, M. Sumiya, S. Fuke, D. Yang, D. Que, Y. Suzuki, Y. Fukuda: Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy, J. Appl. Phys. 90, 4219–4223 (2001)ADSCrossRefGoogle Scholar
  50. 43.50.
    G. Kamler, J. Borysiuk, J.L. Weyher, R. Czarnecki, M. Leszczynski, I. Grzegory: Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers, J. Cryst. Growth 282, 45–48 (2005)ADSCrossRefGoogle Scholar
  51. 43.51.
    J.L. Weyher, F.D. Tichelaar, H.W. Zandbergen, L. Macht, P.R. Hageman: Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN, J. Appl. Phys. 90, 6105–6109 (2001)ADSCrossRefGoogle Scholar
  52. 43.52.
    L. Macht, J.L. Weyher, P.R. Hageman, M. Zielinski, P.K. Larsen: Direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN, J. Phys. Condens. Matter 14, 13345–13350 (2002)ADSCrossRefGoogle Scholar
  53. 43.53.
    J.L. Weyher, L. Macht, F.D. Tichelaar, H.W. Zandbergen, P.R. Hageman, P.K. Larsen: Complementary study of defects in GaN by photoetching and TEM, Mater. Sci. Eng. B 91/92, 280–284 (2002)CrossRefGoogle Scholar
  54. 43.54.
    M.G. Mynbaeva, Y.V. Melnik, A.K. Kryganovskii, K.D. Mynbaev: Wet chemical etching of GaN in H3PO4 with Al ions, Electrochem. Sol.-State Lett. 2, 404–406 (1999)CrossRefGoogle Scholar
  55. 43.55.
    J.L. Weyher, M. Albrecht, T. Wosinski, G. Nowak, H.P. Strunk, S. Porowski: Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy, Mater. Sci. Eng. B 80, 318–321 (2001)CrossRefGoogle Scholar
  56. 43.56.
    H. Ono, J. Matsui: Influence of In atoms on the shape of dislocation etch pits in LEC In-doped GaAs crystals, Jpn. J. Appl. Phys. 25, 1481–1484 (1986)ADSCrossRefGoogle Scholar
  57. 43.57.
    V. Gottschalch, W. Heinig, E. Butter, H. Rosin, G. Freydank: H3PO4-etching of {001}-faces of InP, (GaIn)P, GaP, and Ga(AsP), Krist. Tech. 14, 563–569 (1979)CrossRefGoogle Scholar
  58. 43.58.
    J.L. Weyher, S. Lazar, J. Borysiuk, J. Pernot: Defect-selective etching of SiC, Phys. Status Solidi (a) 202, 578–583 (2005)ADSCrossRefGoogle Scholar
  59. 43.59.
    T. Takenaka, H. Hayashi, K. Murata, T. Inoguchi: Various dislocation etch pits revealed on LPE GaAs{001} layer by molten KOH, Jpn. J. Phys. 17, 1145–1146 (1978)ADSGoogle Scholar
  60. 43.60.
    T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, K. Arai: Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by x-ray topography, J. Cryst. Growth 260, 209–216 (2004)ADSCrossRefGoogle Scholar
  61. 43.61.
    D. Siche, D. Klimm, T. Hölzel, A. Wohlfart: Reproducible defect etching of SiC single crystals, J. Cryst. Growth 270, 1–6 (2004)ADSCrossRefGoogle Scholar
  62. 43.62.
    S.A. Sakwe, R. Müller, P.J. Wellmann: Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC, J. Cryst. Growth 289, 520–526 (2006)ADSCrossRefGoogle Scholar
  63. 43.63.
    D. Hull, D.J. Bacon (Eds.): Introduction to Dislocations (Pergamon, Oxford 1984)Google Scholar
  64. 43.64.
    G. Kamler, J.L. Weyher, I. Grzegory, E. Jezierska, T. Wosinski: Defect-selective etching of GaN in a modified molten bases system, J. Cryst. Growth 246, 21–24 (2002)ADSCrossRefGoogle Scholar
  65. 43.65.
    J.L. Weyher, P.D. Brown, J.L. Rouvière, T. Wosinski, A.R.A. Zauner, I. Grzegory: Recent advances in defect-selective etching of GaN, J. Cryst. Growth 210, 151–156 (2000)ADSCrossRefGoogle Scholar
  66. 43.66.
    J.L. Weyher, S. Lazar, L. Macht, Z. Liliental-Weber, R.J. Molnar, S. Müller, V.G.M. Sivel, G. Nowak, I. Grzegory: Orthodox etching of HVPE-grown GaN, J. Cryst. Growth 305, 384–392 (2007)ADSCrossRefGoogle Scholar
  67. 43.67.
    F. Secco dʼAragona: Dislocation etch for (100) planes in silicon, J. Electrochem. Soc. 119, 948–951 (1972)CrossRefGoogle Scholar
  68. 43.68.
    K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu, H. Seki: Growth and characterization of freestanding GaN substrates, J. Cryst. Growth 237-239, 912–921 (2002)ADSCrossRefGoogle Scholar
  69. 43.69.
    J.L. Weyher, P.D. Brown, J.L. Rouvière, T. Wosinski, A.R.A. Zauner, I. Grzegory: Recent advances in defect-selective etching of GaN, J. Cryst. Growth 210, 151–156 (2000)ADSCrossRefGoogle Scholar
  70. 43.70.
    M. Albrecht, H.P. Strunk, J.L. Weyher, I. Grzegory, S. Porowski, T. Wosinski: Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope, J. Appl. Phys. 92, 2000–2005 (2002)ADSCrossRefGoogle Scholar
  71. 43.71.
    K. Shiojima: Atomic force microscopy and transmission electron microscopy observations of KOH-etched GaN surfaces, J. Vac. Sci. Technol. B 18, 37–40 (2000)CrossRefGoogle Scholar
  72. 43.72.
    K. Engl, M. Beer, N. Gmeinwieser, U.T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, A. Miler, H.-J. Lugauer, G. Brüderl, A. Lell, V. Härle: Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates, J. Cryst. Growth 289, 6–13 (2006)ADSCrossRefGoogle Scholar
  73. 43.73.
    I. Kamata, H. Tsuchida, T. Jikimoto, K. Izumi: Structural transformation of screw dislocations via thick 4H-SiC epitaxial growth, Jpn. J. Appl. Phys. 39, 6496–6500 (2000)ADSCrossRefGoogle Scholar
  74. 43.74.
    S. Ha, H.J. Chung, N.T. Nuhfer, M. Skowronski: Dislocation nucleation in 4H silicon carbide epitaxy, J. Cryst. Growth 262, 130–138 (2004)ADSCrossRefGoogle Scholar
  75. 43.75.
    Z. Zhang, T.S. Sudarshan: Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy, Appl. Phys. Lett. 87, 161917–1–161917–3 (2005)ADSCrossRefGoogle Scholar
  76. 43.76.
    G. Kamler, J. Borysiuk, J.L. Weyher, A. Presz, M. Wozniak, I. Grzegory: Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures, Eur. Phys. J. Appl. Phys. 27, 247–249 (2004)ADSCrossRefGoogle Scholar
  77. 43.77.
    J.L. Weyher, G. Kamler, G. Nowak, J. Borysiuk, B. Lucznik, M. Krysko, I. Grzegory, S. Porowski: Defects in GaN single crystals and homo-epitaxial structures, J. Cryst. Growth 281, 135–142 (2005)ADSCrossRefGoogle Scholar
  78. 43.78.
    G. Kamler, J. Smalc, M. Wozniak, J.L. Weyher, R. Czarnecki, G. Targowski, M. Leszczynski, I. Grzegory, S. Porowski: Selective etching of dislocations in violet-laser diode structures, J. Cryst. Growth 293, 18–21 (2006)ADSCrossRefGoogle Scholar
  79. 43.79.
    J.L. Weyher, J. van de Ven: Selective etching and photoetching of GaAs in CrO3-HF aqueous solutions. Part III: Interpretation of defect-related etch figures, J. Cryst. Growth 78, 191–217 (1986)ADSCrossRefGoogle Scholar
  80. 43.80.
    J.L. Weyher, L. Macht: Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods, Eur. Phys. J. Appl. Phys. 27, 37–41 (2004)ADSCrossRefGoogle Scholar
  81. 43.81.
    C. Frigeri, J.L. Weyher: Electron beam induced current and photoetching investigations of dislocations and impurity atmospheres in n-type LEC GaAs, J. Appl. Phys. 65, 4646–4653 (1989)ADSCrossRefGoogle Scholar
  82. 43.82.
    J.L. Weyher, C. Frigeri, P.J. van der Wel: Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method, J. Cryst. Growth 103, 46–53 (1990)ADSCrossRefGoogle Scholar
  83. 43.83.
    J.L. Weyher, P.J. van der Wel, C. Frigeri: Spatially resolved study of dislocations in Si-doped LEC GaAs by DSL, PL and EBIC, Semicond. Sci. Technol. 7, A294–A299 (1992)ADSCrossRefGoogle Scholar
  84. 43.84.
    J.L. Weyher, L. Macht, G. Kamler, J. Borysiuk, I. Grzegory: Characterization of GaN single crystals by defect-selective etching, Phys. Status Solidi (c) 0(3), 821–826 (2003)CrossRefGoogle Scholar
  85. 43.85.
    J.A. Bardwell, J.B. Webb, H. Tang, J. Fraser, S. Moisa: Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution, J. Appl. Phys. 89, 4142–4149 (2001)ADSCrossRefGoogle Scholar
  86. 43.86.
    B. Yang, P. Fay: Etch rate and surface morphology controle in photoelectrochemical etching of GaN, J. Vac. Sci. Technol. B 22, 1750–1754 (2004)CrossRefGoogle Scholar
  87. 43.87.
    C. Youtsey, L.T. Romano, I. Adesida: Gallium nitride whiskers formation by selective photoenhanced wet etching of dislocations, Appl. Phys. Lett. 73, 797–799 (1998)ADSCrossRefGoogle Scholar
  88. 43.88.
    C. Youtsey, L.T. Romano, R.J. Molnar, I. Adesida: Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching, Appl. Phys. Lett. 74, 3537–3539 (1999)ADSCrossRefGoogle Scholar
  89. 43.89.
    S. Lazar, J.L. Weyher, L. Macht, F.D. Tichelaar, H.W. Zandbergen: Nanopipes in GaN: photo-etching and TEM study, Eur. Phys. J. Appl. Phys. 27, 275–278 (2004)ADSCrossRefGoogle Scholar
  90. 43.90.
    C. Frigeri, J.L. Weyher, L. Zanotti: Study of segregation inhomogeneities in GaAs by means of DSL photoetching and EBIC measurements, J. Electrochem. Soc. 136, 262–266 (1989)CrossRefGoogle Scholar
  91. 43.91.
    M.L. Young, D.R. Wight: Concentration dependence of the minority carrier diffusion length and lifetime in GaP, J. Phys. D Appl. Phys. 7, 1824–1837 (1974)ADSCrossRefGoogle Scholar
  92. 43.92.
    J.L. Weyher, R. Lewandowska, L. Macht, B. Lucznik, I. Grzegory: Etching, Raman and PL study of thick HVPE-grown GaN, Mater. Sci. Semicond. Process. 9, 175–179 (2006)CrossRefGoogle Scholar
  93. 43.93.
    R. Lewandowska, J.L. Weyher, J.J. Kelly, L. Konczewicz, B. Lucznik: Calibration of the PEC etching of GaN by Raman spectroscopy, J. Cryst. Growth 307, 298–301 (2007)ADSCrossRefGoogle Scholar
  94. 43.94.
    D.J. Stirland, R. Ogden: A dislocation “etch-memory” effect in gallium arsenide, Phys. Status Solidi (a) 17, K1–K4 (1973)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  1. 1.Institute of High Pressure PhysicsPolish Academy of Sciences WarsawWarsawPoland
  2. 2.Department of ChemistryUtrecht University, Debye Institute for Nanomaterials ScienceUtrechtThe Netherlands

Personalised recommendations