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Photoemission Studies of Graphene on SiC: Growth, Interface, and Electronic Structure

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Part of the Advances in Solid State Physics book series (ASSP, volume 47)

Abstract

The possibility to grow well ordered graphitic films on SiC(0001) surfaces with thicknesses down to a single graphene layer is promising for future applications. Photoelectron spectroscopy (PES) is a versatile technique for investigating a variety of fundamentals and technologically relevant properties of this system. We survey results from recent PES studies with a focus on the growth of graphene and few layer graphene, the electronic and structural properties of the interface to the SiC substrate, and the electronic structure of the films.

Keywords

Single Graphene Layer Bilayer Graphene Epitaxial Graphene Advance Light Source Photoemission Study 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2008

Authors and Affiliations

  1. 1.Advanced Light SourceLawrence Berkely National LaboratoryUSA
  2. 2.Lehrstuhl für Technische PhysikFriedrich-Alexander-Universität Erlangen-NürnbergGermany
  3. 3.Abteilung MolekülphysikFritz-Haber-InstitutGermany
  4. 4.Department of PhysicsLa Trobe UniversityAustralia

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