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Polaritons in Semiconductor Layer Structures

  • Mathias Schubert
Chapter
Part of the Springer Tracts in Modern Physics book series (STMP, volume 209)

Abstract

The infrared optical response of layered structures composed of polar semiconductor materials is strongly influenced by resonant excitation of phononand plasmon-supported bulk polaritons. In addition, subtle effects are caused by interface modes (surface polaritons, surface guided waves) at which electromagnetic radiation is mediated parallel to the interfaces of thin-film structures. Precise information on phonon and plasmon mode parameters can be obtained from measurement and model analysis of the frequency-dependent sample response, e.g., in terms of the complex ratio ρ in (2.1).1 A rich variety of plasmon-phonon supported bulk and interface modes can occur in thin-film structures composed of polar semiconductors, as will be shown here. A brief outline of the concept of bulk and interface polaritons is given in the following section. The occurrence of surface polaritons and surface guided waves in polar semiconductor thin-film structures is explained and demonstrated.

Keywords

Dielectric Function Interface Mode Light Line Surface Polaritons Ellipsometric Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Authors and Affiliations

  • Mathias Schubert
    • 1
  1. 1.Institut für Experimentelle Physik IIUniversität LeipzigLeipzigGermany

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