Semiconductor device structures consist of stacked layer systems with layers of different alloy compositions, individual dopant incorporation, free-chargecarrier properties, and possibly with hundreds of interfaces. Such structures, as envisioned by Zhores I. Alferov and Herbert Kroemer, are the foundation for today’s world wide high-speed communication system, high-power light sources, and numerical processing abilities.1 Novel metastable materials, unavailable from natural sources, can be grown atomic layer by atomic layer using modern non-equilibrium growth techniques. Determination of their physical properties is mandatory for the appropriate design of heterostructure devices. Likewise, demands for control and characterization of individual layer properties during and after deposition reach out for adequate experimental techniques. Optical tools are non-invasive and non-destructive, and provide immediate access to fundamental physical parameters. This book is devoted to applications of infrared ellipsometry for exploration of lattice vibration (phonon) and free-charge-carrier (plasmon) modes in complex semiconductor layer structures.
KeywordsThin Solid Film Dielectric Function Spectroscopic Ellipsometry Bioanalytical Chemistry Band Structure Parameter
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