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On the Light Extraction Efficiency for III-Nitride-Based Light-Emitting Diodes

  • Zi-Hui Zhang
  • Yonghui Zhang
  • Sung-Wen Huang Chen
  • Wengang Bi
  • Hao-Chung KuoEmail author
Chapter
Part of the Solid State Lighting Technology and Application Series book series (SSLTA, volume 4)

Abstract

Considering the large contrast of the refractive index between the air and the III-nitride semiconductor layer, the external quantum efficiency for III-nitride-based light-emitting diodes is strongly influenced by the light extraction efficiency. This chapter reviews the current status for the technologies that have been adopted thus far to improve the light extraction for III-nitride-based light-emitting diodes. Meanwhile, in-depth physical interpretations are also presented and discussed.

Notes

Acknowledgments

This work is supported by the National Natural Science Foundation of China (Nos. 61604051, 51502074), Natural Science Foundation of Tianjin City (No. 16JCQNJC01000), and Natural Science Foundation of Hebei Province (No. F2017202026).

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Copyright information

© Springer International Publishing AG, part of Springer Nature 2019

Authors and Affiliations

  • Zi-Hui Zhang
    • 1
  • Yonghui Zhang
    • 1
  • Sung-Wen Huang Chen
    • 2
  • Wengang Bi
    • 1
  • Hao-Chung Kuo
    • 2
    Email author
  1. 1.Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information EngineeringHebei University of Technology, Key Laboratory of Electronic Materials and Devices of TianjinTianjinP. R. China
  2. 2.Department of Photonics and Institute of Electro-optical EngineeringNational Chiao Tung UniversityHsinchuTaiwan

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