PrMnO3-Based Scaled (<300 nm) Nonlinear RRAM Device for Selector-Less Array Application

  • P. KumbhareEmail author
  • S. Chouhan
  • Udayan Ganguly
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)


Inherent nonlinearity (NL) in low resistance state (LRS) current of resistive random access memory (RRAM) devices is essential to reduce current leakage due to sneak paths in selector-less RRAM arrays. In this work, we reporta \( {\text{PrMnO}}_{3} \left( {{\text{i}} . {\text{e}} .\,{\text{PMO}}} \right) \) based bipolar resistive random access memory (RRAM) with high nonlinearity (NL) and memory window (MW). The presented \( {\text{W/PMO/Pt }} \) device exhibits a read NL of 97 ± 4 and set NL of 40 ± 4 (2.5× improvement) along with a MW of 150 ± 2. The presented device also exhibitsRESET voltage controlled multiple resistance levels for multi-bit operation. Further, area scaling of currents is demonstrated up to 300 nm device dimension. The obtained NL & MW values are benchmarked against literature. High NL, MW and scaling in PMO-based RRAM is being reported for the first time in this work.



This work was carried out at Indian Institute of Technology Nanofabrication Facility (IITBNF), IIT Bombay. The authors would like to thankNanoMission, Science andEngineering Research Board, Department of Science and Technologyand Department of Electronics and IT, Government of India for funding this work.


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© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Department of Electrical EngineeringIndian Institute of Technology BombayMumbaiIndia

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