Floating Gate Junction-Less Double Gate Radiation Sensitive Field Effect Transistor (RADFET) Dosimeter: A Simulation Study
In this paper, a floating gate Junction-less Double Gate radiation sensitive field effect transistor has been investigated in order to observe the impact of gamma radiation without applying any gate bias in pre-radiation state. Gamma radiation model of Sentaurus 3D device simulator has been used to simulate the trapping de-trapping of the electron-hole pair due the gamma radiation. The change in the electrical characteristics due to the floating gate geometry has been explained in the paper.
KeywordsFloating gate Junction-less Double gate Gamma radiation model Threshold voltage Drain current
Authors would like to thank University of Delhi and University Grant Commission (Sanction letter No.43-287/2014(SR)) for providing necessary fund during course of this work.
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