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Floating Gate Junction-Less Double Gate Radiation Sensitive Field Effect Transistor (RADFET) Dosimeter: A Simulation Study

  • Avashesh Dubey
  • Rakhi Narang
  • Manoj Saxena
  • Mridula GuptaEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this paper, a floating gate Junction-less Double Gate radiation sensitive field effect transistor has been investigated in order to observe the impact of gamma radiation without applying any gate bias in pre-radiation state. Gamma radiation model of Sentaurus 3D device simulator has been used to simulate the trapping de-trapping of the electron-hole pair due the gamma radiation. The change in the electrical characteristics due to the floating gate geometry has been explained in the paper.

Keywords

Floating gate Junction-less Double gate Gamma radiation model Threshold voltage Drain current 

Notes

Acknowledgements

Authors would like to thank University of Delhi and University Grant Commission (Sanction letter No.43-287/2014(SR)) for providing necessary fund during course of this work.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Avashesh Dubey
    • 1
  • Rakhi Narang
    • 2
  • Manoj Saxena
    • 3
  • Mridula Gupta
    • 1
    Email author
  1. 1.Semiconductor Device Research Laboratory, Department of Electronic ScienceUniversity of DelhiNew DelhiIndia
  2. 2.Department of ElectronicsSri Venkateswara College, University of DelhiNew DelhiIndia
  3. 3.Department of ElectronicsDeen Dayal Upadhyaya College, University of DelhiNew DelhiIndia

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