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Study of Thermally Annealed GaSbBi Quantum Dots Grown on GaAs by Liquid Phase Epitaxy

  • M. K. BhowalEmail author
  • S. C. Das
  • S. Dhar
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

Self-assembled GaSbBi quantum dots grown on GaAs substrates by liquid phase epitaxy (LPE) technique and subjected to rapid thermal anneal (RTA) are investigated. Atomic force microscopy shows a triangular shape of the dots with most of them falling in the size ranges of 15–20, 20–25 and 35–40 nm. Photoluminescence (PL) measurements at 10K indicate three QD emission bands due to these three size bands.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia
  2. 2.Indian Institute of Science Education and ResearchMohonanpur, Nadia, KolkataIndia

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