Studies on n-Type a-Si:H and the Influence of ITO Deposition Process on Silicon Heterojunction Solar Cells
The process parameters and the properties of each layer of n-type a-Si:H/c-Si heterojunction solar cell is discussed. The n-type a-Si:H was deposited by rf PECVD by varying the gas mixture ratios, and the activation energy was estimated form the temperature dependent conductivity measurements. We have found that sputtering of ITO damages the interface passivation of a-Si:H/c-Si and a post deposition annealing was necessary to regain the life time. Silicon heterojunction solar cell with laser fired rear contacts has been fabricated showing an implied VOC of 670 mV.
We would like to thank MNRE, Government of India for the financial support through the project AMANSI under the National Solar Science fellowship. We would also like to thank NCPRE and CEN at Indian Institute of Technology Bombay for the facilities provided.