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Structural and Optical Characterization of InGaN/GaN Based Quantum Well Structures Grown by MOCVD

  • Kandasamy PrabakaranEmail author
  • Subburaj Surender
  • Siddham Pradeep
  • Sankaranarayanan Sanjay
  • Madhaiyan Jayasakthi
  • Raju Ramesh
  • Eric Faulques
  • Manavaimaran Balaji
  • Shubra Singh
  • Krishnan Baskar
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The InGaN/GaN based Quantum Well structures were grown on c-plane sapphire substrate using metal-organic chemical vapor deposition. Crystalline quality has been investigated using High-resolution X-ray diffraction (HRXRD) analysis and total dislocation densities of screw and edge types in the GaN epilayer have been calculated. The thickness and indium composition of the InGaN was determined by HRXRD. From simulation fit, the composition of indium was found to be 12 and 15% and InGaN thickness was 5 nm. The pseudomorphic growth is observed for InGaN layers as confirmed by X-ray reciprocal space mapping. Room-temperature time-resolved photoluminescence, photoluminescence measurements have been performed on InGaN/GaN based Quantum Well Structures. The photoluminescence intensity and wavelength was found to get enhanced. Time-resolved photoluminescence measurement revealed interesting observation of longer (392 ps) decay time for the InGaN (5 nm)/GaN QW structures.

Notes

Acknowledgements

The authors gratefully acknowledge the Department of Science and Technology (DST/TM/SERI/2K12/71(G)), Government of India for funding the research project under SERI.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Kandasamy Prabakaran
    • 1
    Email author
  • Subburaj Surender
    • 1
  • Siddham Pradeep
    • 1
  • Sankaranarayanan Sanjay
    • 1
  • Madhaiyan Jayasakthi
    • 1
  • Raju Ramesh
    • 3
  • Eric Faulques
    • 4
  • Manavaimaran Balaji
    • 5
  • Shubra Singh
    • 1
  • Krishnan Baskar
    • 1
    • 2
  1. 1.Crystal Growth Centre, Anna UniversityChennaiIndia
  2. 2.Manonmaniam Sundaranar UniversityTirunelveliIndia
  3. 3.Hunan UniversityChangshaChina
  4. 4.Institut des Matériaux Jean RouxelUniversité de NantesNantesFrance
  5. 5.Department of EnergyUniversity of MadrasChennaiIndia

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