Advertisement

A New Additive-free Industrial Chemical Texturing Process for Diamond Wire Sawn mc-Si Wafers

  • K. P. SreejithEmail author
  • Sandeep Kumbhar
  • Ashok K. Sharma
  • Anil Kottantharayil
  • Prabir K. Basu
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

A novel low cost process for texturing the diamond wire sawn (DWS) multi-crystalline silicon (mc-Si) wafers is demonstrated. The proposed scheme does not use any additives or metals and can be integrated into any standard industrial acid texturing tool. This process can be carried out at temperature ranges from 13–17 °C, which is normally higher than the temperature used for the conventional acid texturization process and thus making the process energy efficient. In this work, authors use HF rich acid solution for the generation of the porous silicon (Por-Si) layer, it is then followed by Por-Si dilution in an alkali solution. Process generates less porous, inverted rounded structures on the mc-Si wafer surfaces with excellent light trapping properties. Textured surfaces yield weighted average reflectance of 22.5% combined with a minority carrier lifetime up to 60 μs.

Notes

Acknowledgements

This work was carried out at the National Centre for Photovoltaic Research and Education (funded by the Ministry of New and Renewable Energy, Government of India) under the project no. 16MNRE002 at IIT Bombay.

References

  1. 1.
    N. Watanabe, Y. Kondo, D. Ide, T. Matsuki, H. Takato, I. Sakata, Characterization of polycrystalline silicon wafers for solar cells sliced with novel fixed-abrasive wire. Prog. Photovoltaics Res. Appl. 18(7), 485–490 (2010)CrossRefGoogle Scholar
  2. 2.
    B. Meinel, T. Koschwitz, J. Acker, Textural development of SiC and diamond wire sawed sc-silicon wafer. Energy Procedia 27, 330–336 (2012)CrossRefGoogle Scholar
  3. 3.
    B. Meinel, T. Koschwitz, C. Blocks, J. Acker, Comparison of diamond wire cut and silicon carbide slurry processed silicon wafer surfaces after acidic texturisation. Mater. Sci. Semicond. Process. 26, 93–100 (2014)CrossRefGoogle Scholar
  4. 4.
    P.K. Basu, K.P. Sreejith, Indian patent application no. 201721022615Google Scholar
  5. 5.
    M. Lippold, F. Buchholz, C. Gondek, F. Honeit, E. Wefringhaus, E. Kroke, Texturing of SiC-slurry and diamond wire sawn silicon wafers by HF–HNO3–H2SO4 mixtures. Sol. Energy Mater. Sol. Cells 127, 104–111 (2014)CrossRefGoogle Scholar
  6. 6.
    A. Kumagai, Texturization using metal catalyst wet chemical etching for multicrystalline diamond wire sawn wafer. Sol. Energy Mater. Sol. Cells 133, 216–222 (2015)CrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • K. P. Sreejith
    • 1
    • 2
    Email author
  • Sandeep Kumbhar
    • 1
  • Ashok K. Sharma
    • 1
  • Anil Kottantharayil
    • 1
    • 2
  • Prabir K. Basu
    • 1
  1. 1.National Centre for Photovoltaic Research and Education, IIT BombayPowaiIndia
  2. 2.Department of Electrical EngineeringIIT BombayPowai, MumbaiIndia

Personalised recommendations