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Terahertz Properties of GaN/AlGaN Heterostructure IMPATT Diode

  • S. K. SwainEmail author
  • S. R. Pattanaik
  • Janmejaya Pradhan
  • G. N. Dash
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The terahertz properties of a Double Drift Region (DDR) heterostructure IMPATT diode, based on GaN/A1GaN, are simulated for operation around 0.5 THz. The device DC to RF conversion efficiency of 17.1% and a noise measure of 21 dB, expected from the heterostructure GaN/A1GaN IMPATT diode, are noteworthy.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • S. K. Swain
    • 1
    Email author
  • S. R. Pattanaik
    • 2
  • Janmejaya Pradhan
    • 3
  • G. N. Dash
    • 1
  1. 1.School of PhysicsSambalpur UniversityBurla, SambalpurIndia
  2. 2.National Institute of Science and TechnologyBerhampurIndia
  3. 3.College of Engineering BhubaneswarBhubaneswasIndia

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