Advertisement

Surface Study of AlGaN/GaN High Electron Mobility Transistor for Fabrication Process Improvement

  • Rupesh Kumar ChaubeyEmail author
  • Anshu Goyal
  • Robert Laishram
  • Sonalee Chopra
  • Amit
  • Niraj Kumar
  • Prateek Kumar
  • Hemant Kumar Saini
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this paper, we report the study of electronic surface of AlGaN/GaN High Electron Mobility Transistor (HEMT) for process improvement of power devices fabrication. HCl based pre-metal treatment was used to remove native oxides from the HEMT surface and an optimum pre-metal treatment timing was achieved which was confirmed from X-ray Photoelectron spectroscopy study.

Notes

Acknowledgements

The authors are thankful to Director, SSPL Dr. R. K. Sharma for his support, encouragement and insightful discussion for this study.

References

  1. 1.
    A.K. Agarwal, S. Mani, S. Seshadri, J.B. Cassady, P.A. Sanger, C.D. Brandt, N. Saks, Naval Res. Rev. 51(1), 14–21 (1999)Google Scholar
  2. 2.
    K. Shenai, R.S. Scott, B.J. Baliga, IEEE Trans. Electron Devices 36, 1811 (1989)ADSCrossRefGoogle Scholar
  3. 3.
    N. Onojima, N. Hirose, T. Mimura, T. Matsui, Jpn. J. Appl. Phys. 48, 094502 (2009)ADSCrossRefGoogle Scholar
  4. 4.
    A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, U.K. Mishra, Electron. Lett. 39, 625 (2003)CrossRefGoogle Scholar
  5. 5.
    H. Okumura, Jpn. J. Appl. Phys. 45, 7565 (2006)ADSCrossRefGoogle Scholar
  6. 6.
    B. Jacobs, M.C.J.C.M. Kramer, E.J. Geluk, F. Karouta, J. Crystal growth 241, 15 (2002)Google Scholar
  7. 7.
    B.R. Strohmeir, Surf. Sci. Spectra 3, 135 (1994)ADSCrossRefGoogle Scholar
  8. 8.
    A. Hess, E. Kemnitz, A. Lippitz, W.E.S. Unger, D.H. Menz, J. Catal. 148, 270 (1994)CrossRefGoogle Scholar
  9. 9.
    Y.C. Kim, H.H. Park, J.S. Chun, W.J. Lee, Thin Solid Films 237, 57 (1994)ADSCrossRefGoogle Scholar
  10. 10.
    Y. Okamoto, T. Adachi, A. Maezawa, T. Imanaka, Bull. Chem. Soc. Japan 64, 236 (1991)CrossRefGoogle Scholar
  11. 11.
    K. Saraswat, Stanford University, EE311Google Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Rupesh Kumar Chaubey
    • 1
    Email author
  • Anshu Goyal
    • 1
  • Robert Laishram
    • 1
  • Sonalee Chopra
    • 1
  • Amit
    • 1
  • Niraj Kumar
    • 1
  • Prateek Kumar
    • 1
  • Hemant Kumar Saini
    • 1
  1. 1.New DelhiIndia

Personalised recommendations