Advertisement

Development of GaN HEMTs Based Biosensor

  • N. ChaturvediEmail author
  • S. Mishra
  • S. Dhakad
  • N. Sharma
  • K. Singh
  • N. Chaturvedi
  • R. Taliyan
  • A. Chauhan
  • D. K Kharbanda
  • P. K Khanna
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this paper, we report on the development of GaN HEMTs for sensing/biosensing applications. Various process steps are optimized at each stages for the development of device. Device shows the 0.5 A/mm drain current, 160 ms/mm transconductance and −4.2 V pinch of voltage for 50 µm Lsd. Devices are packaged for the detection of salt and BPA. Various molar solutions of salt are tested on gateless devices and surprisingly, it is able to detect even the femto molar level of salt. As endocrine disruptors, BPA (Bisphenol A) is tested on gated devices which shows change of about 760 µA in drain current.

References

  1. 1.
    F. Ren, S.J. Pearton, “Recent Advances in Wide-Bandgap Semiconductor Biological and Gas Sensors”, in Semiconductor Device-Based Sensors for Gas, Chemical, and Bio Applications (CRC Press, Boca Raton, London, New York, 2011), pp. 43–96Google Scholar
  2. 2.
    T. Ueda, Y. Uemoto, T. Tanaka, D. Ueda, GaN transistors for power switching and millimeter-wave applications. Int. J. High Speed Electron. Syst. 19(1), 145–152 (2009)CrossRefGoogle Scholar
  3. 3.
    N. Herbecq, I.R. Jeune, A. Linge, M. Zegaoui, P.O. Jeannin, N. Rouger, F. Medjdoub, Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors. Phys. Status Solid A 213(4), 873–877 (2016)ADSCrossRefGoogle Scholar
  4. 4.
    H. Sun, A.R. Alt, S. Tirelli, D. Marti, H. Benedickter, E. Piner, C.R. Bolognesi, Nanometric AlGaN/GaN HEMT performance with implant or mesa isolation. IEEE Electron Device Lett. 32(8), 1056–1058 (2011)ADSCrossRefGoogle Scholar
  5. 5.
    N. Sharma, S.K. Dhakad, C. Periasami, N. Chaturvedi, Optimization of ohmic contacts on thick and thin AlGaN/GaN HEMTs structures. in Superlattices and Microstructures.  https://doi.org/10.1016/j.spmi.2017.03.060ADSCrossRefGoogle Scholar
  6. 6.
    N. Sharma, S. Bhardwaj, S.K. Dhakad, C. Periasami, N. Chaturvedi, Ar + based ion implantation and Ar-RIE of thin and thick AlGaN/GaN HEMT”, in 40th WOCSDICE—Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC—Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE + EXMATEC), At Aveiro, Portugal, Europe, vol. 40Google Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • N. Chaturvedi
    • 1
    Email author
  • S. Mishra
    • 1
  • S. Dhakad
    • 1
  • N. Sharma
    • 1
  • K. Singh
    • 1
  • N. Chaturvedi
    • 2
  • R. Taliyan
    • 2
  • A. Chauhan
    • 1
  • D. K Kharbanda
    • 1
  • P. K Khanna
    • 1
  1. 1.CSIR-Central Electronics Engineering Research InstitutePilaniIndia
  2. 2.Birla Institute of Technology & SciencePilaniIndia

Personalised recommendations