60Coγ Irradiation Effects on I–V Characteristics of AlGaN/GaN Schottky Diodes
AlGaN/GaN Schottky diodes of variable area have been exposed to gamma radiation. These diodes have been irradiated up to a cumulative dose of 104 Gy. The effect of gamma irradiation on the current–voltage (I–V) characteristics of the diodes before and after gamma exposure has been investigated. The I–V characteristics show a shift in the turn-on voltage and improvement in the reverse Schottky current after the irradiation. Parameters like Schottky barrier height and ideality factor has also been calculated from the diode characteristics.
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