Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT on SiC Substrate
In this chapter, DC, RF and noise behaviour of AlGaN/GaN HEMT with 1 µm gate length are studied performing computer simulations using Silvaco TCAD software. The device exhibits a maximum drain current of 645 mA/mm and maximum transconductance of the 162 mS/mm at the gate voltage of 0 and 2.5 V, respectively. The cut-off frequency (fT) and maximum oscillation frequency of about 9.74 and 32.24 GHz are estimated from the simulated results. In addition, device exhibits a minimum noise figure of 10 dB at maximum frequency of 10 GHz. The simulated results are in good agreement with experimental results suggesting AlGaN/GaN HEMT an optimal choice for high voltage and high power applications.
Keywords2DEG GaN HEMT High frequency High power Noise figure SiC Transconductance
Authors thank Defence Research and Development Organization, Govt. of India for financial support (CC/TM/ERIPR/GIA/16-17/008). Madhulika acknowledges the financial assistance of University Grants Commission (UGC), Government of India.
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