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ZigZag Phosphorene Nanoribbons Antidot—Electronic Structure and Device Application

  • Santhia Carmel
  • Adhithan Pon
  • R. Ramesh
  • Arkaprava BhattacharyyaEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this work, we explored the effect of antidots in phosphorene nanoribbons (PNRs) on nanoscale devices. Similar to graphene, the performance of PNRs transistor can be improved with antidots. In present work, we extensively studied the electronic and transport properties of Zigzag-PNRs antidot lattice. Transport simulation results show that the Negative Differential Resistance (NDR) region appearing for antidot device with higher current than that of ZPNRs devices without antidot. This makes the possibility to design device with enhanced transport properties to yield higher on current.

Notes

Acknowledgements

This work was supported in parts by DST Fast track scheme for Young Scientists (SERB/F/6663/2015-16) and DST Extra Mural funding scheme(SERB/F/4240/2016-17). Authors would like to thank SERB and SASTRA University for their support.”

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Santhia Carmel
    • 1
  • Adhithan Pon
    • 1
  • R. Ramesh
    • 1
  • Arkaprava Bhattacharyya
    • 1
    Email author
  1. 1.Device Modeling Laboratory, School of Electrical & Electronics EngineeringSASTRA UniversityThanjavurIndia

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