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Study of Interface Trap Charges in InAs Nanowire Tunnel FET

  • Sankalp K. Singh
  • Ankur Gupta
  • Venkateshan Nagarajan
  • Deepak Anandan
  • Ramesh K. Kakkerla
  • Hung W. Yu
  • Edward Y. ChangEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The effect of Interface traps is investigated on the Homojunction Indium-Arsenide (InAs) gate all around nanowire tunneling FET (HJ-GAA-TFET). Device Ion/Ioff ratio was chosen as key Figure-of-Merit (FoM) in this investigation. Interface traps impact the flat-band voltage of the device, causing degradation in the device performance. It is observed that as the trap density increases, Ioff degrades significantly by ~3 orders in magnitude.

Keywords

Band-to-band tunneling (BTBT) Interface trap charge (ITC) Sub-threshold swing (SS) Tunnel FET (TFET) 

Notes

Acknowledgements

This work was sponsored by the TSMC, NCTU-UCB I-RiCE program, Ministry of Science and Technology, Taiwan, under Grant No. MOST 106-2911-I-009-301

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Sankalp K. Singh
    • 1
  • Ankur Gupta
    • 2
  • Venkateshan Nagarajan
    • 1
  • Deepak Anandan
    • 1
  • Ramesh K. Kakkerla
    • 1
  • Hung W. Yu
    • 1
  • Edward Y. Chang
    • 1
    • 3
    Email author
  1. 1.Department of Materials Science and EngineeringNCTUHsinchuTaiwan
  2. 2.Centre for Applied Research in Electronics, IIT—DelhiNew DelhiIndia
  3. 3.International College of Semiconductor TechnologyNCTUHsinchuTaiwan

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