Studies on Iodine Based Polishing of HgCdTe Material
Surface of Hg1−xCdxTe material epitaxial layers is prepared by Iodine–Potassium Iodide based non-aqueous solution. This solution provides better stoichiometry at the surface compared to conventional bromine based etchant as evident in the X-ray photoelectron spectroscopy. Ellipsometry measurement also indicated the better cleanliness of the surface, when etched with the Iodine–Potassium Iodide chemical solution. The morphology observed under the Nomarski microscope, showed improved surface. The root mean square roughness was measured using AFM at the surface of HgCdTe, prepared by polishing with the iodine–potassium iodide based solution was found to be ~0.74 nm.
KeywordsHgCdTe Roughness Surface morphology XPS
The authors are grateful to Dr. Ashok Kapoor, Mr. Akhilesh Pandey and Ms. Garima Gupta for using the characterization tools.
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