Optimization of Al Composition in EBL of InGaN/GaN Based Laser Diodes
p-type AlGaN Electron Blocking Layer (EBL) has been used successfully for suppression of electron leakage to the p side cladding layers. InGaN/GaN based laser diodes have been investigated numerically for improvements in the output parameters of laser diodes by adjusting the Al composition of the EBL. It is found that Al composition in the EBL is critical for optimum performance of the laser diodes.
KeywordsElectron blocking layer Electron leakage Quantum well Numerical simulation
Authors would like to thank Director SSPL for allowing to carry out the above work.
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