InGaAs Based Short-Wave Infrared p-i-n Photodetector

  • Anand SinghEmail author
  • Sumit Jain
  • Anil Kumar
  • Vanita R. Agarwal
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)


We report the fabrication of InP/In0.53Ga0.47As based short wave infrared photodetector for remote sensing application. Smooth and vertical sidewalls in the mesa isolation of the diodes using wet etching are observed with etch depth of more than 2.2 μm. Ohmic contact to heavily doped n-type InGaAs by depositing Ti/Pt/Au metal layer is formed using electron beam evaporation and showed the specific contact resistance of 3 × 10−7 Ω-cm2. InGaAs based detector arrays are fabricated in the 640 × 512 matrix with 25 μm × 25 μm detector pitch.


InGaAs Night vision Dark current Infrared detector 


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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Anand Singh
    • 1
    Email author
  • Sumit Jain
    • 1
  • Anil Kumar
    • 1
  • Vanita R. Agarwal
    • 1
  1. 1.Solid State Physics LaboratoryTimarpur, New DelhiIndia

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