InGaAs Based Short-Wave Infrared p-i-n Photodetector
We report the fabrication of InP/In0.53Ga0.47As based short wave infrared photodetector for remote sensing application. Smooth and vertical sidewalls in the mesa isolation of the diodes using wet etching are observed with etch depth of more than 2.2 μm. Ohmic contact to heavily doped n-type InGaAs by depositing Ti/Pt/Au metal layer is formed using electron beam evaporation and showed the specific contact resistance of 3 × 10−7 Ω-cm2. InGaAs based detector arrays are fabricated in the 640 × 512 matrix with 25 μm × 25 μm detector pitch.
KeywordsInGaAs Night vision Dark current Infrared detector