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Effect of Oxygen Pressure on Growth of Cd0.05Zn0.95O Thin Films Using Pulsed Laser Deposition

  • Sugandha SharmaEmail author
  • Basant Saini
  • Ravinder Kaur
  • Vinay Gupta
  • Monika Tomar
  • Avinashi Kapoor
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this work, ternary CdxZn1−xO (x = 0.05) thin films were deposited on Corning glass substrates using pulsed laser deposition (PLD) growth technique. Films were grown in environment of oxygen flown into the PLD chamber at pressures of 5, 20 and 40 mTorr. XRD studies revealed wurtzite crystal structure and a highly (002)-preferred orientation for all films. The influence of oxygen pressure on FWHM and lattice constants was recorded. UV-Vis transmittance studies indicated that carrier concentration resulting from the oxygen vacancies in films strongly affects band gap energy. This was confirmed by evaluating carrier concentrations and electrical resistivities of films using a four-probe Hall effect measurement set-up at 298 K. Films grown in 20 mTorr oxygen pressure reported the highest carrier concentration of 1.57 × 1015 cm−2, while registering the lowest energy band gap of 3.2 eV, hence making it a critically important pressure for film growth.

Notes

Acknowledgements

S. Sharma is thankful to UGC, New Delhi for providing financial support through the award of Senior Research Fellowship.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Sugandha Sharma
    • 1
    Email author
  • Basant Saini
    • 1
  • Ravinder Kaur
    • 2
  • Vinay Gupta
    • 3
  • Monika Tomar
    • 3
  • Avinashi Kapoor
    • 1
  1. 1.Department of Electronic ScienceUniversity of Delhi South CampusNew DelhiIndia
  2. 2.Deen Dayal Upadhyaya CollegeDwarka, New DelhiIndia
  3. 3.Department of Physics and AstrophysicsUniversity of DelhiNew DelhiIndia

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