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Broadband Photodetector with Lateral n-rGO/p+Si Heterojunction

  • Manjri Singh
  • Gaurav Kumar
  • Nisha Prakash
  • Suraj P. KhannaEmail author
  • Prabir Pal
  • Surinder P. SinghEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

We have fabricated metal-free hybrid photodetectors with broadband detection capability, ranging from ultraviolet, visible to near infrared region utilizing 2-dimensional (2-D) reduced graphene oxide (rGO) layered structure and conventional silicon (Si) semiconductor. The fabricated device demonstrated peak responsivity of 2.73 A/W and detectivity of 1.1 × 1012 Jones and EQE of ~407% under 830 nm illumination at 1 V applied bias. The device shows excellent photoswitching behavior under low light conditions and thus suitable for designing low-power optoelectronic systems that are important for many military applications such as directed energy weapons, hand-held warfare agent detection, night vision and data communication.

Notes

Acknowledgements

The authors would like to thank Director, CSIR-NPL for encouragement. The work was funded by CSIR Network Project NanoSHE (BSC0112), India.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Manjri Singh
    • 1
    • 2
  • Gaurav Kumar
    • 1
  • Nisha Prakash
    • 1
    • 2
  • Suraj P. Khanna
    • 1
    Email author
  • Prabir Pal
    • 1
    • 2
  • Surinder P. Singh
    • 1
    Email author
  1. 1.CSIR-National Physical LaboratoryNew DelhiIndia
  2. 2.AcSIR-Academy of Scientific & Innovative ResearchNew DelhiIndia

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