Broadband Photodetector with Lateral n-rGO/p+Si Heterojunction
We have fabricated metal-free hybrid photodetectors with broadband detection capability, ranging from ultraviolet, visible to near infrared region utilizing 2-dimensional (2-D) reduced graphene oxide (rGO) layered structure and conventional silicon (Si) semiconductor. The fabricated device demonstrated peak responsivity of 2.73 A/W and detectivity of 1.1 × 1012 Jones and EQE of ~407% under 830 nm illumination at 1 V applied bias. The device shows excellent photoswitching behavior under low light conditions and thus suitable for designing low-power optoelectronic systems that are important for many military applications such as directed energy weapons, hand-held warfare agent detection, night vision and data communication.
The authors would like to thank Director, CSIR-NPL for encouragement. The work was funded by CSIR Network Project NanoSHE (BSC0112), India.
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