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InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes with Transparent Ni/ITO and Pt/ITO p-Type Contacts

  • Kuldip SinghEmail author
  • A. Chauhan
  • Manish Mathew
  • Rajesh Punia
  • Rajender Singh Kundu
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) with Ni/ITO (5/50 nm) and Pt/ITO (0.8/50 nm) current spreading layer were investigated. The electrical and optical properties of Ni/ITO and Pt/ITO films were also investigated. It was found that the normalized transmittance of Ni/ITO and Pt/ITO films could reach 79.22 and 78.98% at 460 nm, which was almost equal. It was also found that Pt/ITO had showed better linear current–voltage characteristics compared to Ni/ITO contacts. The specific contact resistance for Pt/ITO contacts was 5.88 × 10−2 Ω cm2, while for Ni/ITO contacts, it was 5.66 × 10−1 Ω cm2 i.e. ~10 time more. The EL intensity of blue LED was much higher with Pt/ITO p-contact compared to Ni/ITO p-contact. The forward voltages (VF) of LEDs for two contacts (Ni/ITO and Pt/ITO p-contacts) at 20 mA current injection were found 4.49 and 3.5 V, respectively.

Notes

Acknowledgements

This work was supported by council of scientific and industrial research (CSIR) under network programme (PSC-0102).

References

  1. 1.
    M. Koike, N. Shibata, H. Kato, Y. Takahashi, Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications. IEEE J. Select. Top. Quantum Electron. 8(2), 271–277 (2002)ADSCrossRefGoogle Scholar
  2. 2.
    S.P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J.S. Speck, S. Nakamura, Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays. Acta Mater. 61, 945–951 (2013)CrossRefGoogle Scholar
  3. 3.
    Y. Kuwahara, T. Fujji, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujjiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, GaInN/GaInN-based solar cells using strained layer GaInN/GaInN superlat tice active layer on free standing GaN substrate. Appl. Phys. Express 4, 021001 (2011)ADSCrossRefGoogle Scholar
  4. 4.
    J.K. Sheu, Y.K. Su, G.C. Chi, P.L. Koh, M.J. Jou, C.M. Chang, C.C. Liu, W.C. Hung, High transparency Ni/Au ohmic contact to p-type GaN. Appl. Phys. Lett. 74, 2340–2342 (1999)ADSCrossRefGoogle Scholar
  5. 5.
    Y.C. Lin, S.J. Chang, Y.K. Su, T.Y. Tsai, C.S. Chang, S.C. Shei, C.W. Kuo, S.C. Chen, InGaN/GaN light-emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts. Solid-State Electron. 47, 849–853 (2003)ADSCrossRefGoogle Scholar
  6. 6.
    Y.C. Lin, S.J. Chang, Y.K. Su, T.Y. Tsai, C.S. Chang, S.C. Shei, S.J. Hsu, C.H. Liu, U.H. Liaw, S.C. Chen, B.R. Huang, Nitride-based light-emitting diodes with Ni/ITO p-type Ohmic contacts. IEEE Photonic Technol. Lett. 14, 1668–1670 (2002)ADSCrossRefGoogle Scholar
  7. 7.
    C.-S. Chang, S.-J. Chang, Y.-K. Su, Y.-Z. Chiou, Y.-C. Lin, Y.-P. Hsu, S.-C. Shei, H.-M. Lo, J.-C. Ke, S.-C. Chen, C.-H. Liu, InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts. Jpn. J. Appl. Phys. 42, 3324–3327 (2003)ADSCrossRefGoogle Scholar
  8. 8.
    J.-Y. Huang, G.-H. Fan, S.-W. Zheng, Q.-L. Ni, S.-T. Li, J.-X. Cao, S. Jun, Y. Zhang, Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes. Chin. Phys. B 19(4), 047205-1–047205-4 (2010)ADSGoogle Scholar
  9. 9.
    D.W. Kim, Y.J. Sung, J.W. Park, G.Y. Yeom, A study of transparent indium tin oxide (ITO) contact to p-GaN. Thin Solid Films 398(99), 87–92 (2001)ADSCrossRefGoogle Scholar
  10. 10.
    J.-S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. Lee, S.-J. Park, Low resistance Pt/Ni/Au ohmic contacts to p-type GaN. Appl. Phys. Lett. 74(1), 70–72 (1999)ADSCrossRefGoogle Scholar
  11. 11.
    R.-H. Horng, D.-S. Wuu, Y.-C. Lien, W.-H. Lan, Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN. Appl. Phys. Lett. 79(18), 2925–2927 (2001)ADSCrossRefGoogle Scholar
  12. 12.
    W. Hou, C. Stark, S. You, L. Zhao, T. Detchprohm, C. Wetzel, Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN. Appl. Opt. 51(23), 5596–5600 (2012)ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Kuldip Singh
    • 1
    Email author
  • A. Chauhan
    • 1
  • Manish Mathew
    • 1
  • Rajesh Punia
    • 2
  • Rajender Singh Kundu
    • 2
  1. 1.Optoelectronics Devices GroupCSIR-Central Electronics Engineering Research InstitutePilaniIndia
  2. 2.Department of Applied PhysicsGuru Jambheshwar University of Science and TechnologyHisarIndia

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