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Scaling of Silicon PIN Waveguide Photodetector at 1550 nm Wavelength

  • Sreevatsa KurudiEmail author
  • Riddhi Nandi
  • Bijoy Krishna Das
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

Single-mode silicon p-i-n waveguides with varying cross-sections have been studied experimentally for on-chip photodetection at an operating wavelength λ ~ 1550 nm. It has been shown that the quantum efficiency increases with decreasing waveguide cross-section. The performance of such a photodetector can be modelled in terms of density of surface states, bulk two photon absorption co-efficient, and waveguide loss parameters.

Keywords

Silicon photonics Waveguide Surface states Two-photon absorption Photodetector 

References

  1. 1.
    M.W. Geis et al., CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band. IEEE Photonics Technol. Lett. 19(3), 152–154 (2007)ADSCrossRefGoogle Scholar
  2. 2.
    Y. Li et al., Characterization of surface-state absorption in foundry-fabricated silicon ridge waveguides at 1550 nm using photocurrents, in Conference on Lasers and Electro-Optics. Optical Society of America (2016), p. SM2G.4Google Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Sreevatsa Kurudi
    • 1
    Email author
  • Riddhi Nandi
    • 1
  • Bijoy Krishna Das
    • 1
  1. 1.Department of Electrical EngineeringIIT MadrasChennaiIndia

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