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MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering

  • Ritesh Bhardwaj
  • Pankaj Sharma
  • Md Arif Khan
  • Rohit Singh
  • Shaibal MukherjeeEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (IV) and photoresponse measurement on photodetector properties.

Notes

Acknowledgements

Authors are thankful to DIBS and PL facility, which are part of Sophisticated Instrument Centre (SIC) of IIT Indore. Ritesh Bhardwaj and Md. Arif Khan would like to thank DeitY, Ministry of Electronics and Information Technology, Government of India, for providing fellowship grant under Visvesvaraya PhD Scheme for Electronics and Information Technology. Prof Shaibal Mukherjee is thankful to DeitY, Ministry of Electronics and Information Technology, Government of India for the Young Faculty Research Fellowship (YFRF) under the Visvesvaraya PhD Scheme for Electronics and Information Technology. This work is also partially funded by DST, Government of India.

References

  1. 1.
    H.L. Liang, Z.X. Mei, Q.H. Zhang, L. Gu, S. Liang, Y.N. Hou, D.Q. Ye, C.Z. Gu, R.C. Yu, X.L. Du, Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors. Appl. Phys. Lett. 98(22), 221902 (2011)ADSCrossRefGoogle Scholar
  2. 2.
    R. Singh, P. Sharma, M.A. Khan, V. Garg, V. Awasthi, A. Kranti, S. Mukherjee, Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact. J. Phys. D Appl. Phys. 49, 445303 (2016)CrossRefGoogle Scholar
  3. 3.
    S. Limpijumnong, S.B. Zhang, S.H. Wei, C.H. Park, Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide. Phys. Rev. Lett. 92, 155504 (2004)ADSCrossRefGoogle Scholar
  4. 4.
    F.X. Xiu, Z. Yang, L.J. Mandalapu, D.T. Zhao, J.L. Liu, W.P. Beyermann, High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy. Appl. Phys. Lett. 87, 152101 (2005)ADSCrossRefGoogle Scholar
  5. 5.
    P. Wang, N. Chen, Z. Yin, R. Dai, Y. Bai, p-type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering. Appl. Phys. Lett. 89, 202102 (2006)ADSCrossRefGoogle Scholar
  6. 6.
    Y.F. Li, B. Yao, Y.M. Lu, Z.P. Wei, Y.Q. Gai, C.J. Zheng, Z.Z. Zhang, B.H. Li, D.Z. Shen, X.W. Fan, Z.K. Tang, Realization of p-type conduction in undoped MgxZn1−xO thin films by controlling Mg content. Appl. Phys. Lett. 91, 232115 (2007)ADSCrossRefGoogle Scholar
  7. 7.
    K. Vanheusden, C.H. Seager, W.T. Warren, D.R. Tallant, J.A. Voigt, Correlation between photoluminescence and oxygen vacancies in ZnO phosphors. Appl. Phys. Lett. 68, 403 (1996)ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Ritesh Bhardwaj
    • 1
  • Pankaj Sharma
    • 1
  • Md Arif Khan
    • 1
  • Rohit Singh
    • 1
  • Shaibal Mukherjee
    • 1
    Email author
  1. 1.Hybrid Nanodevice Research Group (HNRG)Electrical Engineering, Indian Institute of Technology IndoreSimrol, IndoreIndia

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