Designing InP-Nanowire Based Vertical Metal-Oxide-Semiconductor Capacitors for Wavelength Selective Visible Light Sensing
The current work investigates photogeneration phenomena in InP-nanowire vertical metal-oxide-semiconductor (MOS) photo-capacitor by developing a theoretical model with second quantization description of photon absorption by a self-consistent simultaneous quantum-electrostatic solver. The equations are solved by using non-equilibrium Green’s function (NEGF) formalism. The vertical MOS device can directly detect the color of incident light in the range of 380–700 nm (visible region) with high spectral resolution by varying the nanowire diameter and applied voltage. The entire visible spectrum is detected with relatively higher device dimensions in comparison to the Si-nanowire based device. Such devices can be a potential candidate for wavelength selective direct photodetection with lesser fabrication complexities.
The authors would like to acknowledge the University Grant Commission (UGC), Government of India, for funding the fellowship of Mr. Subhrajit Sikdar through University of Calcutta. The authors would also like to acknowledge the Centre of Excellence (COE) for the Systems Biology and Biomedical Engineering, University of Calcutta, funded by the World Bank through TEQIP Phase II for proving the necessary infrastructural support.